The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence
(PL) of n‐type InGaAsP is investigated. These layers, epitaxially grown on InP substrates …

InGaAsP, adapted in its composition for a band gap equivalent to a wavelength of 1.3 μm
and lattice matched to InP, is grown by liquid‐phase epitaxy. Transmission and reflectance …

We perform a structural and optical characterization of InAs 1− x N x epilayers grown by
molecular beam epitaxy on InAs substrates (x≲ 2.2%)⁠. High-resolution x-ray diffraction …

The GaAs, N dilute nitrides are emerging as important materials for band gap engineering in
a host of device applications. 1–3 These are primarily driven by the uniquely large bowing …

Epitaxial layers of InGaAs on InP are the building blocks in optoelectronic device fabrication,
where the dependence of the band gap on composition is utilized in device design. The …

In experiments on the LPE growth of InGaAsP on (100)‐InP substrates, it has been found
that constant‐composition epitaxial layers can be grown at constant temperature using the …

The influence of growth temperature on the composition of InGaAsP films grown by low
pressure metalorganic vapor phase epitaxy (MOVPE) is reported for quaternary (Q) alloys …

Band‐gap and lattice constant data are presented characterizing the transient composition
that occurs at the onset of liquid‐phase‐epitaxial growth of InGaAsP on InP substrates. This …

The Er-doped InGaAsP epitaxial layers lattice-matched to InP with wavelengths of 1.29 and
1.55, um have been grown by liquid-phase epitaxy. When the Er amount doped in the …

The bandgap energy of InGaAsP quaternary alloy lattice-matched to InP has been precisely
determined by electroreflectance (ER) measurements. The ER spectra show the typical low …