First, it has been made clear that the important parameters of the SE laser are its active layer
thickness d and the mirror reflectivity R. The required values of three parameters such as …

We would like to report on the performance of buried heterostructure (BH) GaAs/Ga 0.65 Al
0.35 As surface emitting (SE) lasers with p-type Ga 0.9 Al 0.1 As/Ga 0.4 Al 0.6 As and SiO …

AIGaAs/GaAs surface-emitting laser diodes (SELDs) with distributed Bragg reflectors (DBRs)
and current blocking layers are fabricated with the combination of a two-step epitaxial …

Abstract A GaAlAs/GaAs Metalorganic chemical vapor deposition (MOCVD) has been
introduced for growing GaAlAs/GaAs wafers with a thick active layer (d\cong3 µm) and …

Surface-emitting GaAlAs/GaAs laser with etched mirrors Page 1 where cn = M j=lO k i • ki~j ie {1,
2, . . . , M - 1} This structure is depicted in Fig. 3. The lattice structure has been transformed into …

We are reporting on the performance of GaAs/Ga 0.65 Al 0.35 As surface emitting (SE)
lasers with a Ga 0, Al 0.1 As/AlAs multilayer Bragg reflector grown by OMVPE. The …

The threshold current of a GaInAsP/InP surface-emitting (SE) injection laser has been
reduced to 15 mA (CW) at 77 K. The diameter of circular buried mesa was made smaller (∼ …

Fabrication of a high-quality Fabry-Perot resonator with a GaAs active layer and two Bragg
AlAs/(AlAs) 2 (GaAs) 9 reflectors is reported. This structure lases CW at room temperature …

Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laser Page 1 correlation and
cancellation with respect to the maximum of the reflectivity curve. While the correlation …

Room temperature pulsed operation of 0.67 µm wavelength GaInAsP/AlGaAs lasers on
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …