ABSTRACT Defects in the InGaAsP-InP multiepitaxial layers on the InP (III) P substrate were
investigated using chemical etching techniques. Threading dislocations~ stacking faults …

The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP
epitaxial layers Page 1 Materials Science and Engineering, B9 ( 1991 ) 109-113 109 The …

Three examples pertaining to the influence of heavy doping on the microscopic perfection of
as-grown InP crystals, thermal decomposition of InP crystals and epi-layers and optically …

Lattice defects generated during LPE growth of InP InGaAsP InGaAs structure epitaxial
layers on InP substrates are studied. Two different kinds of dislocations are observed at the …

Defects induced in heavily doped InGaAsP crystals (λ= 1.3 μm) with Zn, Cd, Sn and Te as
dopants, grown by liquid phase epitaxy, were characterized by transmission electron …

Recently, 1110.53 Gao. 47 As has been demonstrated to have a potential for applications in
optical sources and detectors operating near 1.65 11m. Laser diode devices and …

We report the study of several parameters which affect background impurity levels in In 0.53
Ga 0.47 As layers grown by LPE, on (100) oriented InP substrates. Net carrier …

A phosphorus beam source utilizing thermal decomposition of InP is employed in a
molecular beam epitaxy system. Quaternary InGaAsP films with reproducible P and As …

In experiments on the LPE growth of InGaAsP on (100)‐InP substrates, it has been found
that constant‐composition epitaxial layers can be grown at constant temperature using the …

The growth of GaInAsP lattice matched to GaAs by organometallic vapor phase epitaxy
using ethyldimethylindium and tertiarybutylphosphine is reported for the first time. The …