InAs/InAs 1-x Sb x strain-balanced superlattices (SLs) on GaSb are a viable alternative to
the well-studied InAs/Ga 1-x In x Sb SLs for mid-and long-wavelength infrared (MWIR and …

Strain-balanced InAs/InAs 1− x Sb x type-II superlattices (SLs) have been proposed for
possible long-wavelength infrared applications. This paper reports a detailed structural …

Infrared photodetectors, used in applications for sensing and imaging, such as military target
recognition, chemical/gas detection, and night vision enhancement, are predominantly …

Strain-balanced InAs/InAs 1− x Sb x type-II superlattices (SLs) on GaSb substrates with
0.27≤ x≤ 0.33 were grown by molecular beam epitaxy and demonstrated …

The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …

The optical properties of bulk InAs 0.936 Bi 0.064 grown by molecular beam epitaxy on a
(100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of …

InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been
proposed as an alternative to InAs/(In) GaSb short period superlattices for mid-to long …

InAs/InAsSb type-II superlattice focal plane arrays that demonstrate high operability and
uniformity with cutoffs ranging from 5 μm to 13 μm have already been demonstrated …

The structural properties of InAs/(GaIn) Sb and (InGa) As/GaSb superlattices (SLs), grown by
solid-source molecular-beam epitaxy on (0 0 1) GaAs substrates using a strain relaxed …

The InAs/InAs 1− x Sb x superlattice system distinctly differs from two well-studied
superlattice systems GaAs/AlAs and InAs/GaSb in terms of electronic band alignment …