Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to
integrate graphene into microelectronics, but the synthesis is still accompanied by several …

Growth of high-quality graphene on germanium is to date only reported at growth
temperatures near the substrate melting point. Direct integration of graphene growth into …

Breakthroughs in cutting‐edge research fields such as hetero‐integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …

The physical and chemical state of the underlying germanium (Ge) substrate is crucial for
the CVD synthesis of high-quality graphene. Here, we investigate the main causes …

Graphene has been predicted to play a role in post-silicon electronics due to the
extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals …

It is extremely difficult to control the growth orientation of the graphene layer in comparison
to Si or III–V semiconductors. Here we report a direct observation of graphene growth and …

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-
compatible processes. For future application in next generation devices the accurate control …

We review some of the recent results obtained on the graphene synthesis on Ge (100)/Si
(100) substrates by molecular beam epitaxy and wafer scale chemical vapor deposition. We …

Graphene, a monoatomic sheet of graphite, has recently received significant attention
because of its potential impact in a wide variety of research areas. This thesis presents …

Direct growth of graphene integrated into electronic devices is highly desirable but difficult
due to the nominal~ 1000° C chemical vapor deposition (CVD) temperature, which can …