An inductor-based 52-GHz 0.18/spl mu/m SiGe HBT cascode LNA with 22 dB gain
M Gordon, SP Voinigescu - … of the 30th European Solid-State …, 2004 - ieeexplore.ieee.org
A 52-GHz two-stage cascode LNA implemented in a production 0.18/spl mu/m SiGe
BiCMOS process is presented. By using inductors rather than transmission lines for …
BiCMOS process is presented. By using inductors rather than transmission lines for …
47–77 GHz and 70–155 GHz LNAs in SiGe BiCMOS technologies
G Liu, H Schumacher - 2012 IEEE Bipolar/BiCMOS Circuits and …, 2012 - ieeexplore.ieee.org
This paper presents two broadband LNAs covering the frequency ranges from 47 to 77 GHz
and 73 to 140 GHz, with peak gain above 20 dB. A proposed T-type matching topology has …
and 73 to 140 GHz, with peak gain above 20 dB. A proposed T-type matching topology has …
A high gain, W-band SiGe LNA with sub-4.0 dB noise figure
This paper presents a W-band LNA implemented in a 90 nm SiGe BiCMOS technology. The
LNA achieves a maximum gain of 34 dB and a minimum NF of 3.5 dB at 80 GHz with greater …
LNA achieves a maximum gain of 34 dB and a minimum NF of 3.5 dB at 80 GHz with greater …
A W-band LNA in 0.18-μm SiGe BiCMOS
L Gilreath, V Jam, P Heydari - 2010 IEEE International …, 2010 - ieeexplore.ieee.org
This paper presents the design and implementation of a W-band LNA. Fabricated in a 0.18-
μm SiGe BiCMOS technology, the five-stage LNA achieves a peak power gain of 19 dB with …
μm SiGe BiCMOS technology, the five-stage LNA achieves a peak power gain of 19 dB with …
A miniature V-band 3-stage cascode LNA in 0.13 μm CMOS
CM Lo, CS Lin, H Wang - 2006 IEEE International Solid State …, 2006 - ieeexplore.ieee.org
A miniature V-band (50 to 75GHz) 3-stage cascode CMOS LNA implemented in 0.13 μm
bulk CMOS technology exhibits better than 20dB measured gain from 51 to 57.5 GHz in 0.46 …
bulk CMOS technology exhibits better than 20dB measured gain from 51 to 57.5 GHz in 0.46 …
A wide-bandwidth W-band LNA in InP/Si BiCMOS technology
P Watson, A Mattamana, R Gilbert… - 2014 IEEE MTT-S …, 2014 - ieeexplore.ieee.org
This paper presents the development of high-gain, wide-bandwidth, W-band LNA integrated
circuits utilizing a novel 0.25 μm InP/Si BiCMOS process with Ft/Fmax of 330/270 GHz. A 4 …
circuits utilizing a novel 0.25 μm InP/Si BiCMOS process with Ft/Fmax of 330/270 GHz. A 4 …
A SiGe: C BiCMOS LNA for 60GHz band applications
A new differential LNA dedicated to 60 GHz band has been implemented in a 130 nm
BiCMOS technology intended for millimeter-waves (mm-Waves) applications. Focusing on …
BiCMOS technology intended for millimeter-waves (mm-Waves) applications. Focusing on …
Design of a 1.5 V CMOS integrated 3 GHz LNA
RA Rafla, MN El-Gamal - 1999 IEEE International Symposium …, 1999 - ieeexplore.ieee.org
Two 1.5 V-supply LNAs were designed in a 0.35/spl mu/m CMOS process, for center
frequencies of 2.5 and 3 GHz, with 2.5 and 3 dB noise figures respectively. The circuits use …
frequencies of 2.5 and 3 GHz, with 2.5 and 3 dB noise figures respectively. The circuits use …
A packaged 2.4 GHz LNA in a 0.15 µm CMOS process with 2kV HBM ESD protection
V Chandrasekhar, CM Hung, YC Ho… - Proceedings of the …, 2002 - ieeexplore.ieee.org
This paper presents the first 2.4 GHz LNA with 2kV HBM ESD protection integrated in a 0.15
µm CMOS process. The LNA has been packaged in a standard TQFP48 package and …
µm CMOS process. The LNA has been packaged in a standard TQFP48 package and …
A 5GHz resistive-feedback CMOS LNA for low-cost multi-standard applications
JHC Zhan, SS Taylor - 2006 IEEE International Solid State …, 2006 - ieeexplore.ieee.org
A 5GHz resistive-feedback CMOS LNA for low-cost multi-standard applications Page 1 ISSCC
2006 / SESSION 11 / RF BUILDING BLOCKS AND PLLS / 11.5 11.5 A 5GHz Resistive-Feedback …
2006 / SESSION 11 / RF BUILDING BLOCKS AND PLLS / 11.5 11.5 A 5GHz Resistive-Feedback …