One important class of low-k materials used as interconnect dielectrics employs methyl
groups added to nanoporous SiO 2 matrices. These carbon-doped oxide materials are …

The degradation of porous low-k materials, like SiOCH, under plasma processing continues
to be a problem in the next generation of integrated-circuit fabrication. Due to the exposure …

Damage incurred during plasma processing, leading to increases in dielectric constant k, is
a persistent problem with porous ultra-low-k dielectric films, such as SiCOH. Although most …

Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), and
ab initio density functional theory-based molecular dynamics simulations demonstrate …

Porous dielectric materials offer lower capacitances that reduce RC time delays in integrated
circuits. Typical porous low dielectric (low-k) materials include SiOCH—silicon dioxide with …

As of today, plasma damage remains as one of the main challenges to the reliable
integration of porous low-k materials into microelectronic devices at the most aggressive …

The damage induced by CO 2 and O 2 plasmas to an ultra low-k (ULK) dielectric film with a
dielectric constant (κ) of 2.2 was investigated. The dielectric constant was observed to …

Porous dielectric materials provide lower capacitances that reduce RC time delays in
integrated circuits. Typical low-k materials include porous SiOCH—silicon dioxide with …

Plasmas, known to emit high levels of vacuum ultraviolet (VUV) radiation, are used in the
semiconductor industry for processing of low-k organosilicate glass (SiCOH) dielectric …

Porous low-k dielectrics used in integrated circuits interconnects are sensitive to plasma
processes and exposure to moist ambient. In this paper, the authors use a vacuum and dry …