Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M Gibbon, JP Stagg, CG Cureton… - Semiconductor …, 1993 - iopscience.iop.org
Low-pressure MOCVD has been used to grow layers of InP, InGaAs, GaInAsP and quantum
well material on planar substrates patterned with silica masks. The thicknesses and, where …
被引用次数：193 相关文章 所有 7 个版本

GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

JP Duchemin, JP Hirtz, M Razeghi, M Bonnet… - Journal of Crystal …, 1981 - Elsevier
The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …
被引用次数：100 相关文章 所有 5 个版本

Growth of high-quality InGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers

Y Ohba, M Ishikawa, H Sugawara, M Yamamoto… - Journal of Crystal …, 1986 - Elsevier
In an attempt to obtain high-quality In 0.5 (Ga 1− x A1 x) 0.5 P epilayers on GaAs substrates
for visible semiconductor la applications, effects of growth procedure and conditions (growth …
被引用次数：188 相关文章 所有 3 个版本

High-power and high-efficiency 1.3 micron InAsP compressively-strained MQW lasers at high temperatures

H Oohashi, S Seki, T Hirono, H Sugiura… - Electronics …, 1995 - ui.adsabs.harvard.edu
High-power and high-efficiency 1.3 micron InAsP compressively-strained MQW lasers at high
temperatures - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …
被引用次数：58 相关文章 所有 6 个版本

Buried GaInAs/InP layers grown on nonplanar substrates by one‐step low‐pressure metalorganic vapor phase epitaxy

YD Galeuchet, P Roentgen, V Graf - Applied physics letters, 1988 - pubs.aip.org
Growth of GaInAs/InP layers on nonplanar substrates by low‐pressure metalorganic vapor
phase epitaxy has been investigated using InP substrates patterned with [011] and [011̄] …
被引用次数：59 相关文章 所有 7 个版本

Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers

K Streubel, J Wallin, G Landgren, U Öhlander… - Journal of crystal …, 1994 - Elsevier
GaInAsP/GaInAsP multi quantum well (MQW) structures with 1% compressive strain in the
wells and a bandgap wavelenght of 1.55 μm have been grown by low-pressure …
被引用次数：42 相关文章 所有 5 个版本

Very high efficiency GaInAsP/GaAs strained‐layer quantum well lasers (λ= 980 nm) with GaInAsP optical confinement layers

SH Groves, JN Walpole, LJ Missaggia - Applied physics letters, 1992 - pubs.aip.org
A large increase in differential quantum efficiency from 35% to> 45% per facet is obtained
using a GaInAsP alloy (Es--1.65 eV), instead of GaAs, for the optical confinement layers in …
被引用次数：51 相关文章 所有 6 个版本

High-performance/spl lambda/= 1.3/spl mu/m InGaAsP-InP strained-layer quantum well lasers

PJA Thijs, T van Dongen, LF Tiemeijer… - Journal of lightwave …, 1994 - ieeexplore.ieee.org
Compressively and tensile strained InGaAsP-InP MQW Fabry-Perot and distributed
feedback lasers emitting at 1.3-/spl mu/m wavelength are reported. For both signs of the …
被引用次数：81 相关文章 所有 6 个版本

InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

RP Schneider Jr, BW Wessels - Applied physics letters, 1990 - pubs.aip.org
Strained InAs/InP single quantum wells of nominal thickness 1–11 monolayers have been
prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For …
被引用次数：69 相关文章 所有 7 个版本

Effect of growth parameters on the interfacial structure of GaInAs/InP quantum wells

J Hergeth, D Grützmacher, F Reinhardt, P Balk - Journal of crystal growth, 1991 - Elsevier
We have studied the growth of GaInAs/InP multiple quantum well (MQW) structures by low
pressure MOVPE using TMI, TMG, AsH 3 and PH 3 as precursors. Using 2 K …
被引用次数：53 相关文章 所有 4 个版本