InGaAsP layers grown by liquid-phase epitaxy on InP substrates can form lattice-matched
heterojunctions sensitive to light in the wavelength range from 0.9 to 1.7 μm. A simple model …

Publisher Summary This chapter discusses the liquid-phase epitaxy (LPE) growth of
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …

Band‐gap and lattice constant data are presented characterizing the transient composition
that occurs at the onset of liquid‐phase‐epitaxial growth of InGaAsP on InP substrates. This …

In experiments on the growth of InGaAsP alloys by liquid‐phase epitaxy on (100)‐InP
substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes …

The distribution coefficients for the growth of lattice-matched InGaAsP on (IOO)-InP
substrates in the 1.15-1.31-/. Lm spectral range have been determined. These results have …

Abstract Layers of InGaAsP/(100) InP covering the full wavelength range from 0.92 to 1.65
μm were grown by liquid phase epitaxy at 630° C from two-phase solutions and at 600° C …

Auger depth profiles of InGaAsP‐InP heterojunctions grown by liquid phase epitaxial
techniques under different lattice‐mismatch conditions have been measured. Results are …

Data are presented showing that two different mechanisms control the LPE growth of
InGaPAs in the step-cooled technique. An automated growth apparatus, which allows an …

The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …

InGaAsP and InGaP epitaxial layers lattice-matched to (001)-oriented GaAs substrates
successfully grown by liquid phase epitaxy have been investigated by transmission electron …