Schottky diode of porous n-GaAs layers have been prepared by chemical etching of n-type
GaAs (100) substrates in (3 and 5) M of phosphoric acid (H3PO4) for 1 min. The influences …

Porous GaAs layers have been prepared by electrochemical etching of p+-type GaAs (10 0)
surfaces in two different solutions; HCl: H 2 O 2: H 2 O (HF free electrolyte) and HCl: H 2 O 2 …

A porous GaAs layer has been formed by electrochemical anodization in HF based solution
on extremely doped p-type GaAs substrate. Porous nature of the elaborated sample has …

We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …

Porous GaAs layers have been formed by anodic etching of n+-type GaAs (10.0) substrates
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …

Porous GaAs layers were formed by electrochemical etching of p-type GaAs (100)
substrates in HF solution. A surface characterization has been performed on p-type GaAs …

Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …

GaAs: Sn–GaAs: Si samples with a porous layer formed on their surfaces have been
explored. The porous layer was formed by electrochemical anodization of the surface of n …

We report on the fabrication of porous GaAs (100) using three different acids, H2SO4, HF,
and HCl, diluted in DMF based solutions. The mixture of H2SO4 with DMF showed the best …

The electrochemical etching of n+‐type GaAs in a hydrofluoric acid (HF) solution results in
the formation of a porous layer. The current–potential characteristic I (V) of the n+‐type GaAs …