We analyze the photoluminescence temperature behavior of InGaAs/GaAs quantum dots
grown by heterogeneous droplet epitaxy. Morphologically, these dots are nanocrystal …

Crossed transitions between the wetting layer valence band and the quantum dot (QD)
electron states are revealed in the photoluminescence from self-assembled In 0.4 Ga 0.6 …

The application of quantum dots QDs as active material in optical devices has attracted
much attention, due to the potential advantages offered by the three-dimensionally confined …

We report on the impact of thermal annealing of buried InGaAs quantum dots (QDs) on the
eigenstate energies and their inhomogeneous broadening due to size fluctuations …

The authors present a modulated reflectivity study of the wetting layer (WL) states in
molecular beam epitaxy grown In As∕ Ga As quantum dot (QD) structures designed to emit …

Spatially-resolved photoluminescence (PL) spectroscopy was performed at different
temperatures on self-assembled InAs quantum dots embedded into MBE-grown In 0.15 Ga …

We present a cross-sectional scanning tunneling microscopy STM study of heterogeneous-
droplet-epitaxy HDE-grown InGaAs quantum dots QDs. We found that the structural …

A one step method for the production of quantum dots is presented. The method exploits the
mismatch strain of molecular beam epitaxy (MBE) deposited InGaAs on GaAs to induce a …

Annealing of InGaAs quantum dots (QDs) fabricated by metal-organic chemical vapour
deposition and covered with a very thin GaAs cap layer completely eliminates large …

InGaAs/GaAs quantum dots have been grown directly on (111) B GaAs substrates using
molecular beam epitaxy. The island growth mode, which causes quantum dot formation, is …