We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well
(MQW) laser diodes (LD's) fabricated on Si substrates by metallorganic chemical vapor …

We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well
(MQW) laser diodes (LD's) fabricated on Si substrates by MOCVD. The lowest threshold …

A low-threshold AlGaAs/GaAs patterned quantum well laser has been fabricated on a V-
grooved GaAs/Si substrate using metal-organic chemical vapor deposition. High-resolution …

The low threshold current density GaAsSb/GaAs quantum well lasers were realised by metal
organic chemical vapour deposition. A record low threshold current density of 190A/cm^ sup …

Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in
GaAsl AIGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed …

High-quality GaAs layers with dislocation densities of less than 5× 10 6 cm-2 on Si
substrates have been obtained through a combination of thermal-cycle annealing and …

We demonstrate the first room‐temperature low‐threshold continuous‐wave (cw) operation
of Al0. 3Ga0. 7As/GaAs single quantum well (SQW) heterostructure lasers grown by …

5-W cw laser diodes with a 100-μm wide strip contact emitting at a wavelength of 850 nm are
manufactured and studied. The laser heterostructure with a heavily-doped P emitter was …

We demonstrate room temperature continuous-wave (CW) operation of Al 0.3 Ga 0.7
As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical …

AIGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates
using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown …