Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned …
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned …
Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors
JB Kim, C Fuentes-Hernandez, SJ Kim, S Choi… - Organic …, 2010 - Elsevier
Hybrid organic–inorganic complementary inverters composed of pentacene and amorphous
InGaZnO for p-and n-channel thin-film transistors (TFTs) were fabricated on flexible …
InGaZnO for p-and n-channel thin-film transistors (TFTs) were fabricated on flexible …
High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
PT Liu, YT Chou, LF Teng, CS Fuh - Applied Physics Letters, 2010 - pubs.aip.org
Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are
demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) …
demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) …
Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on AlOx dielectric
The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters
with pentacene ( p type) and ZnO ( n type) hybrid channels on rf-deposited Al O x …
with pentacene ( p type) and ZnO ( n type) hybrid channels on rf-deposited Al O x …
Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors
Complementary inverters composed of pentacene for the p-channel thin-film transistors
(TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been …
(TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been …
Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs
We report the development of hybrid complementary inverters based on p-channel organic
and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at< 200 …
and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at< 200 …
Complementary Inverter Circuits Based on p-Cu2O and n-ZTO Thin Film Transistors
This paper describes the fabrication of copper oxide and zinc tin oxide complementary
inverters where both the p-type and n-type channels were deposited by RF magnetron …
inverters where both the p-type and n-type channels were deposited by RF magnetron …
Pentacene and ZnO hybrid channels for complementary thin-film transistor inverters operating at 2V
We report on the fabrication of complementary thin-film transistor (TFT) inverter with organic-
inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n …
inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n …
A 2V organic complementary inverter
A complementary organic thin-film transistor technology uses pentacene and F 16 CuPc as
the p-type and n-type materials, respectively. The semiconductors are patterned by vacuum …
the p-type and n-type materials, respectively. The semiconductors are patterned by vacuum …
Low-voltage-operating complementary inverters with C60 and pentacene transistors on glass substrates
M Kitamura, Y Arakawa - Applied Physics Letters, 2007 - pubs.aip.org
Organic complementary inverters with C 60 and pentacene thin-film transistors (TFTs) have
been fabricated on glass substrate. The inverter operated at low voltages of 1–5 V. The C …
been fabricated on glass substrate. The inverter operated at low voltages of 1–5 V. The C …