Selective are controls of carrier concentrations in GaAs and alloy compositions in AlGaAs
have been studied by selectively irradiating the substrate with an ArF excimer laser during …

Laser assisted atomic layer epitaxy in MOVPE (metalorganic vapor phase epitaxy) has been
applied to selective area growth. Single crystalline GaAs was grown by scanning a laser …

Stimulated growth of single crystalline GaAs has been obtained by irradiation of (100)
oriented GaAs substrates inside an MOCVD reactor with a pulsed Nd-YAG laser. Process …

In a production-type LP-MOVPE system at a reactor pressure of 20 mbar, Al x Ga 1− x
As/GaAs structures (0< x< 0.7) have been grown on 2 inch wafers. X-ray and low …

The detailed observations of selective MOCVD growth of Ga 1− x Al x Al x As on substrates
partly masked by a SiO 2 film were carrie out in the complete range of AlAs fraction x. The …

FIG. 2. Nomarski phase contrast micrograph showing the presence of a bump in the laser
irradiated area. Ar laser irradiation was performed during the introduction ofTMG. other by …

The mechanism for the grow rate suppression of InGaAs by Ar ion laser-assisted chemical
beam epitaxy is studied. A comparison of the cross-sectional profile in the laser-irradiated …

Selective area growth of AlGaAs and AlAs was successfully demonstrated in the
conventional MOVPE (TMG/TMA/AsH 3/H 2) system by introducing a small quantity of HCl …

Metalorganic vapour phase epitaxy (MOVPE) growth of GaAs and GaAlAs has been studied
by laser reflectometry using two wavelengths. At 1.32 μm, GaAs and GaAlAs are totally …

Atomic layer epitaxy (ALE) of AlAs and AlGaAs with metalorganic vapor-phase epitaxy
(MOVPE) under Ar-ion laser irradiation has been successfully realized in a triethylaluminum …