We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically
grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by …

Silicon photonics provides a promising platform for energy-efficient interconnects within
supercomputers and data centers. However, developing a complementary metal–oxide …

The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …

High-performance, multispectral, and large-format infrared focal plane arrays are the long-
demanded third-generation infrared technique for hyperspectral imaging, infrared …

Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-
scale optical interconnects within photonic integrated circuits on a silicon manufacturing …

We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on
on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast …

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long
attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs …

We report the first demonstration of a hybrid silicon quantum dot (QD) laser, evanescently
coupled to a silicon waveguide. InAs/GaAs QD laser structures with thin AlGaAs lower …

We demonstrate significantly enhanced performances of 1.3-μm InAs/GaAs quantum dot
(QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy …

Direct integration of high-performance laser diodes on silicon will dramatically transform the
world of photonics, expediting the progress toward low-cost and compact photonic …