Crystal growth on a Si substrate for the fabrication of a 1.2 µm GaInAsP laser diode is
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse …

The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode
(LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have …

Low threshold current 1.5 μm GaInAsP laser was obtained grown on directly bonded InP/Si
substrate using MOVPE. To decrease the threshold current, the thickness and doping …

Abstract An epitaxially grown GaInAsP/InP double-hetero laser diode (LD) has been
demonstrated on a wafer-bonded InP/Si substrate for the first time. The as-grown structure …

We have demonstrated for the first time 1.5 μm GaInAsP laser on silicon substrate using
direct wafer bonding and MOVPE growth. The energy bandgap of bulk crystalline silicon is …

Fabrication and lasing properties of novel GaInAsP/InP injection lasers at 1.3 μm, with
buried heterostructure grown on mesa substrate and fabricated by single-step crystal growth …

The photoluminescence (PL) spectrum distribution of a low‐pressure metalorganic vapor‐
phase epitaxy grown wafer with an InGaAsP/InP double heterostructure (DH) was measured …

The letter presents a surface-emitting GaInAsP/InP injection laser with 7 μm cavity length
operating at 1.30 μm of wavelength. The threshold was as low as 50 mA at 77 K. The device …

A novel integration method for III–V semiconductor devices on a Si platform was
demonstrated. Thin-film InP was directly bonded on a Si substrate and metal organic vapor …

A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The
structure utilises a single LPE growth process on a grooved substrate to form an index …