Optical properties of InGaAs lattice‐matched to InP
TW Nee, AK Green - Journal of applied physics, 1990 - pubs.aip.org
The optical spectra of a molecular-beam-epitaxially grown IUos3 GaOA7 As epilayer
latticematched on a (100) InP substrate are measured in the visible and infrared regions …
latticematched on a (100) InP substrate are measured in the visible and infrared regions …
Low‐loss optical waveguides made with molecular beam epitaxial In0. 012Ga0. 988As and In0. 2Ga0. 8As‐GaAs superlattices
U Das, PK Bhattacharya, S Dhar - Applied physics letters, 1986 - pubs.aip.org
We demonstrate for the first time low-loss optical guiding in In-doped GaAs. Ridge
waveguides are made with single InO. OI2Ga04MMAs ternary layers and In (12GaO. MAs …
waveguides are made with single InO. OI2Ga04MMAs ternary layers and In (12GaO. MAs …
Optical constants of GaxIn1− xP lattice matched to GaAs
M Schubert, V Gottschalch, CM Herzinger… - Journal of Applied …, 1995 - pubs.aip.org
The optical constants of GaeslInu4sP have been determined from 0.8 to 5.0 eV using
variable-angle spectroscopic ellipsometry measurements at room temperature. The metal …
variable-angle spectroscopic ellipsometry measurements at room temperature. The metal …
Optical properties of InGaAs‐InP single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition
MS Skolnick, PR Tapster, SJ Bass, N Apsley… - Applied physics …, 1986 - pubs.aip.org
Low-temperature photoluminescence and photoconductivity studies of high quality InGaAs-
InP quantum wells grown by metalorganic chemical vapor deposition at atmospheric …
InP quantum wells grown by metalorganic chemical vapor deposition at atmospheric …
Liquid‐phase epitaxial growth of lattice‐matched InGaAsP on (100)‐InP for the 1.15–1.31‐μm spectral region
M Feng, TH Windhorn, MM Tashima… - Applied Physics …, 1978 - pubs.aip.org
The distribution coefficients for the growth of lattice-matched InGaAsP on (IOO)-InP
substrates in the 1.15-1.31-/. Lm spectral range have been determined. These results have …
substrates in the 1.15-1.31-/. Lm spectral range have been determined. These results have …
Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared
GJ Brown, JE Van Nostrand, SM Hedge… - … and Devices VII, 2002 - spiedigitallibrary.org
The optical properties of an (formula available in paper) type-II superlattice lattice matched
to InP (001) was characterized by photo luminescence and near infrared photoresponse …
to InP (001) was characterized by photo luminescence and near infrared photoresponse …
Refractive indexes of (Al, Ga, In) As epilayers on InP for optoelectronic applications
Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al, Ga, In) As
epilayers lattice matched to InP were characterized by double-crystal diffractometry and low …
epilayers lattice matched to InP were characterized by double-crystal diffractometry and low …
High‐precision band‐gap determination of Al0.48In0.52As with optical and structural methods
D Oertel, D Bimberg, RK Bauer, KW Carey - Applied physics letters, 1989 - pubs.aip.org
The band gap of Alo48 Inos2 As lattice matched to InP is determined with high precision at
1.5 and 300 K as 1.511 and L439 eV, respectiveiy. This determination, which resolves a …
1.5 and 300 K as 1.511 and L439 eV, respectiveiy. This determination, which resolves a …
Refractive indices of InGaAlAs grown by molecular beam epitaxy
C De Bernardi, M Meliga, S Morasca, C Rigo… - Journal of applied …, 1990 - pubs.aip.org
f is directly determined. The spectrum of a waveguide 10/lm wide is shown in Fig. 2, where
two cutoffs can be seen, at 1.22 and 1.50/lm for TM polarization, and at 1.25 and l. 55/lm for …
two cutoffs can be seen, at 1.22 and 1.50/lm for TM polarization, and at 1.25 and l. 55/lm for …
Ellipsometric study of GaAs/GaP superlattices
In the recent years the interest in strained-layer systems has grown considerably. This
increase is due to the possibility of using this system as, for example, buffer layers for …
increase is due to the possibility of using this system as, for example, buffer layers for …