Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350° C
A metallization scheme suitable to explore the capability of 4H–SiC for high temperature
applications was designed and fabricated on Schottky barrier diodes (SBDs). The device …
applications was designed and fabricated on Schottky barrier diodes (SBDs). The device …
Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing
TN Oder, TL Sung, M Barlow, JR Williams… - Journal of electronic …, 2009 - Springer
High-temperature processing was used to improve the barrier properties of three sets of n-
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …
4H-SiC Schottky barrier diodes using Mo-, Ti-and Ni-based contacts
D Perrone, M Naretto, S Ferrero, L Scaltrito… - Materials Science …, 2009 - Trans Tech Publ
We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …
Effect of surface preparation and thermal anneal on electrical characteristics of 4H-SiC Schottky barrier diodes
D Alok, R Egloff, E Arnold - Materials Science Forum, 1998 - osti.gov
The effect of surface preparation and thermal anneal on electrical characteristics of 4H-SiC
Schottky barrier diodes was investigated with the aim of finding a suitable fabrication …
Schottky barrier diodes was investigated with the aim of finding a suitable fabrication …
The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC
The effects of isochronal annealing on the electrical, morphological and structural
characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current …
characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current …
The effect of the post-metallization annealing of Ni/n-type 4H-SiC Schottky contact
The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is
focused on the improvement of the Schottky contact and interface stabilization using an …
focused on the improvement of the Schottky contact and interface stabilization using an …
4H-SiC Schottky contact improvement for temperature sensor applications
F Draghici, M Badila, G Brezeanu… - CAS 2013 …, 2013 - ieeexplore.ieee.org
An improvement in performance of 4H-SiC Schottky diodes using a Ni metal is proposed.
The effects of the Schottky and ohmic contacts' annealing process conditions are …
The effects of the Schottky and ohmic contacts' annealing process conditions are …
Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
C Raynaud, DM Nguyen, P Brosselard… - Materials Science …, 2009 - Trans Tech Publ
Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal
admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are …
admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are …
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer
D Shi, Y Wang, X Wu, Z Yang, X Li, J Yang, F Cao - Solid-State Electronics, 2021 - Elsevier
In this paper, an Al/Ti Schottky-electrode was fabricated on a 4H-SiC surface via sputtering,
and an Al 2 O 3 layer was inserted into the metal semiconductor contact-surface using …
and an Al 2 O 3 layer was inserted into the metal semiconductor contact-surface using …
Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes
We present a theoretical and experimental study on the design, fabrication and
characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers …
characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers …