Comparison of single-and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs

I Ladany, FZ Hawrylo - Journal of Crystal Growth, 1981 - Elsevier
Two well known methods for growth of InGaAsP/InP material for emitters operating in the 1.3
μm range are the single phase method, in which accurately equilibrated melts used, and the …
被引用次数：10 相关文章 所有 2 个版本

Meltback and pullover as causes of disturbances in liquid‐phase epitaxial growth of InGaAsP/InP 1.3‐μm laser material

I Ladany, RT Smith, CW Magee - Journal of Applied Physics, 1981 - pubs.aip.org
It is well known that there can be irregularities in the growth of multiple layers by liquid-
phase epitaxy (LPE). For example, there are occasional variations in the emission …
被引用次数：9 相关文章 所有 8 个版本

Vapor phase growth of InGaAsP/InP DH structures by the dual-growth-chamber method

T Mizutani, M Yoshida, A Usui… - Japanese Journal of …, 1980 - iopscience.iop.org
A chloride transport vapor phase epitaxial technique has been developed for InGaAsP/InP
heterostructures using the" dual-growth-chamber" method. Two independent growth …
被引用次数：79 相关文章 所有 4 个版本

Vapor phase growth of InGaAsP/InP DH structures by the dual-growth-chamber method.

M Takashi, Y Masaji, U Akira, W Hisatsune… - Japanese Journal of …, 1980 - cir.nii.ac.jp
抄録 A chloride transport vapor phase epitaxial technique has been developed for
InGaAsP/InP heterostructures using the “dual-growth-chamber” method.< BR> Two …
被引用次数：3 相关文章

LPE growth of InP and related alloys

H Nagai - Progress in Crystal Growth and Characterization, 1986 - Elsevier
InGaAsP mixed crystals lattice-matched to InP crystal constitute a key material for optical
transmission systems in the 1.2~ 1.65~ m reglon. Once the pos~ i~ illty of heteroJunctlon …
被引用次数：4 相关文章 所有 2 个版本

LPE growth of 1.5–1.6 μm In1− xGaxAs1− yPy crystals by a modified source-seed method

K Takahei, H Nagai - Journal of Crystal Growth, 1981 - Elsevier
Abstract 1.5–1.6 μm wavelength region InP/InGaAsP/InP double heterostructure crystals
were grown at a relatively low temperature (592° C) in order to prevent melt-back of the …
被引用次数：19 相关文章 所有 5 个版本

The influence of LPE growth techniques on the alloy composition of InGaAsP

M Feng, LW Cook, MM Tashima, TH Windhorn… - Applied Physics …, 1979 - pubs.aip.org
In experiments on the LPE growth of InGaAsP on (100)‐InP substrates, it has been found
that constant‐composition epitaxial layers can be grown at constant temperature using the …
被引用次数：39 相关文章 所有 7 个版本

Growth and characterization of InGaAsP lattice-matched to InP

PA Houston - Journal of Materials Science, 1981 - Springer
The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …
被引用次数：31 相关文章 所有 6 个版本

Variation of the thickness and composition of lpe InGaAsP, InGaAs, and InP layers grown from a finite melt by the step-cooling technique

LW Cook, MM Tashima, GE Stillman - Journal of Electronic Materials, 1981 - Springer
Abstract Constant composition InGaAsP and InGaAs epitaxial layers can be grown using the
step-cooling technique. However, the requirement of a fixed growth temperature limits the …
被引用次数：22 相关文章 所有 6 个版本

Characteristics of tin and cadmium doping in liquid‐phase epitaxial grown InGaAsP

N Tamari, J Degani, H Shtrikman… - Journal of applied …, 1985 - pubs.aip.org
The characteristics of tin and cadmium doping of liquid‐phase epitaxial grown InGaAsP
layers have been investigated. A change in the solid composition of the quaternary is …
被引用次数：5 相关文章 所有 8 个版本