A unified carrier-transport model for a nanoscale surrounding-gate metal-oxide-
semiconductor field-effect transistor (SG MOSFET) is developed. The model is based on …

An analytic potential-based model for the undoped surrounding-gate MOSFETs is derived in
the paper. The model is obtained from rigorously solving Poisson equation together with the …

The paper presents a realistic and necessary improvement of the existing current–voltage
model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of …

In this paper we extend a compact surrounding-gate MOSFET model to include the
hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce …

The diffusion current of fully depleted (FD) nanoscale surrounding-gate (SG) metal–oxide–
semiconductor field effect transistors (MOSFETs) with a doped channel was physically …

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs)
scales into the nanometer regime, quantum mechanical effects are becoming more and …

An analytic model for the nanowire MOSFETs (NWFETs) with Ge/Si core/shell structure is
developed in this paper. The analytical expressions of electrostatic potential and charges of …

A quasi-analytical model bas been developed for predicting the current–voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …

Quantum simulations of multiple-gate nanowire Schottky-barrier (SB) MOSFETs in the
ballistic transport regime have been performed by self-consistently solving the …

A unified drain current model for silicon-nanotube-based ultra-thin double gate-all-around
(DGAA) mosfet is presented in this work. Physics-based, analytical expressions for surface …