Dielectric functions and electronic structure of InAsxP1− x films on InP
The authors present room-temperature pseudodielectric function spectra⟨ ε⟩ of In As x P 1−
x films grown on (001) InP by chemical beam epitaxy. A wet-chemical etching procedure …
x films grown on (001) InP by chemical beam epitaxy. A wet-chemical etching procedure …
Electrical properties of epitaxially grown InAs0. 61P0. 39 films
SS Li, JR Anderson, JK Kennedy - Journal of Applied Physics, 1975 - pubs.aip.org
InAs1_xP x alloy systems have recently received con-Siderable attention since their energy
band gaps cover the near-infrared spectrum (ie, from 0.94 to 3. 6} Jm). With this broad range …
band gaps cover the near-infrared spectrum (ie, from 0.94 to 3. 6} Jm). With this broad range …
On the temperature dependence of the InP (001) bulk and surface dielectric function
M Zorn, T Trepk, JT Zettler, C Meyne… - Proceedings of 8th …, 1996 - ieeexplore.ieee.org
The bulk dielectric function and the surface dielectric anisotropy (SDA) of InP (001) were
determined from room temperature up to 873 K. Measurements were performed on as …
determined from room temperature up to 873 K. Measurements were performed on as …
Pseudodielectric functions of InGaAs alloy films grown on InP
We present room-temperature pseudodielectric function spectra of InxGa1xAs films grown
on 100 InP by solid-source molecular-beam epitaxy. A wet-chemical etching procedure is …
on 100 InP by solid-source molecular-beam epitaxy. A wet-chemical etching procedure is …
Band alignment and quantum states of InAsxP1− x/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence
The band alignment and the quantum states of InAsxP1− x/InP surface quantum well (SQW)
are investigated using ultraviolet photoelectron spectroscopy (UPS) and photoluminescence …
are investigated using ultraviolet photoelectron spectroscopy (UPS) and photoluminescence …
Dielectric functions and interband transitions of InxAl1− xP alloys
TJ Kim, SY Hwang, JS Byun, DE Aspnes, EH Lee… - Current Applied …, 2014 - Elsevier
We report pseudodielectric functions< ε> from 1.5 to 6.0 eV of In x Al 1− x P ternary alloy
films. Data were obtained by spectroscopic ellipsometry on 1.2 μm thick films grown on (001) …
films. Data were obtained by spectroscopic ellipsometry on 1.2 μm thick films grown on (001) …
Dielectric functions of alloys
We present room-temperature pseudodielectric function spectra< ɛ>=< ɛ 1>+ i< ɛ 2> of In x
Ga 1− x As films grown on (100) InP by solid-source molecular-beam epitaxy. A wet …
Ga 1− x As films grown on (100) InP by solid-source molecular-beam epitaxy. A wet …
Pseudodielectric function of from 1.5 to 6 eV
V Blickle, K Flock, N Dietz, DE Aspnes - Applied physics letters, 2002 - pubs.aip.org
Zinc germanium diphosphide (ZnGeP2) is an optically uniaxial ternary II–IV–V2
semiconductor that crystallizes in the chalcopyrite structure. The material is particularly …
semiconductor that crystallizes in the chalcopyrite structure. The material is particularly …
Structural and optical properties of strain‐relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP (001) using tertiarybutylarsine
P Desjardins, M Beaudoin, R Leonelli… - Journal of applied …, 1996 - pubs.aip.org
A combination of transmission electron microscopy and high‐resolution x‐ray diffraction
analyses has been used to determine the exact strain in each layer of InAsP/InP multiple …
analyses has been used to determine the exact strain in each layer of InAsP/InP multiple …
Interband transitions of InAsxSb1− x alloy films
TJ Kim, JJ Yoon, SY Hwang, DE Aspnes… - Applied Physics …, 2009 - pubs.aip.org
We report pseudodielectric-function spectra from 1.5 to 6.0 eV of InAs x Sb 1− x ternary
alloys obtained by spectroscopic ellipsometry. Energies of the E 1, E 1+ Δ 1, E 0′, E …
alloys obtained by spectroscopic ellipsometry. Energies of the E 1, E 1+ Δ 1, E 0′, E …