[HTML][HTML] Advances in InP and competing materials

M Telford - III-Vs Review, 2001 - Elsevier
This May's 13th Indium Phosphide and Related Materials conference (IPRM'01) in Nara,
Japan attracted a record 470 delegates, despite the slowdown in the industry (perhaps due …

InP ready for role in the information revolution

S Pickering - III-Vs Review, 1999 - Elsevier
The on-going evolution of information technology is ensuring growing interest in indium
phosphide (InP) electronics. The latest developments in this area were aired at the 'Eleventh …

The history and future of InP based electronics and optoelectronics

DL Lile - … . 1998 International Conference on Indium Phosphide …, 1998 - ieeexplore.ieee.org
Just as the III-V compounds and alloys have competed with Si for market share so InP has
continually battled GaAs for the niches where this class of materials has the advantage. In …

[HTML][HTML] The 'idiom'of InP

G Purvis - III-Vs Review, 2004 - Elsevier
Indium phosphide may be among the younger of the compound materials, but dedicated
work is moving its attributes firmly into the market. ASIP Inc's merger with ThreeFive …

Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs

M Quillec - Physical Concepts of Materials for Novel …, 1991 - spiedigitallibrary.org
Two quaternary Ill-V systems are available for InP based opto and micro-electronics:
InGaAsP and InGaAlAs. The first has been extensively studied with remarkable success for …

Low-temperature CAIBE processes for InP-based optoelectronics

J Daleiden, K Eisele, JD Ralston… - Seventh …, 1995 - ieeexplore.ieee.org
We have developed Cl/sub 2//Ar and IBr/sub 3//Ar chemically-assisted ion-beam etching
(CAIBE) processes, which allow high-quality etching of InP-based materials such as laser …

Solid source MBE for phosphide-based devices

M Toivonen, A Salokatve, K Tappura… - Proceedings of 8th …, 1996 - ieeexplore.ieee.org
Phosphorus-based materials are of great importance for many advanced optoelectronic and
electronic devices. The most common techniques used for growing phosphorus containing …

Pin photodiodes in metamorphic InAlAs-InGaAs-GaAs for long wavelength applications

JH Jang, G Cueva, DC Dumka… - 58th DRC. Device …, 2000 - ieeexplore.ieee.org
InP-based heterostructures have traditionally been used for the fabrication of photodetectors
and integrated optoelectronic circuits (OEICs) operating at long wavelength (1.55/spl mu/m) …

Trends in Indium Phosphide Microelectronics

A Scavennec - Le Journal de Physique Colloques, 1988 - jphyscol.journaldephysique.org
Résumé Parallèlement à l'optoélectronique 1, 3-1, 5 µm, et grâce à des propriétés de
transport électroniques remarquables, une microélectronique sur les matériaux à base de …

[图书][B] InP and related compounds: materials, applications and devices

MO Manasreh - 2000 - taylorfrancis.com
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its
related compounds, such as InGaAsP alloy, have been realized as very important materials …