We have demonstrated for the first time a pseudo‐quaternary GaInAsP semiconductor
consisting of a graded gap Ga0. 47In0. 53As/InP superlattice. The average composition and …

We have investigated the electrical and optical properties of avalanche photodiodes with the
absorption region formed by Ga1− x In x As/InP strained‐layer superlattices. High quality …

Avalanche photodiodes with fast response times and high quantum efficiencies in the 1. 0-1.
6-! lm wavelength region are expected to find wide use in low-loss wide-bandwidth optical …

Vapour-grown 1.3 ?m InGaAsP/InP avalanche photodiodes × Close The Infona portal uses
cookies, ie strings of text saved by a browser on the user's device. The portal can access …

The authors reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche
photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs …

The fabrication of an InGaAsP-InAlAs superlattice avalanche photodiode using a gas source
molecular beam epitaxy is discussed. A quaternal alloy of InGaAsP was used for the well …

Preparation and performance of separate avalanche and multiplication superlattice
photodiodes are reported. The absorbing region of these devices consists of up to 100 …

InP/InGaAs avalanche photodiodes (APDs) with a compositionally graded quaternary layer
at the heterointerface between the InGaAs absorption and InP multiplication regions were …

A novel structure supedattice avalanche photodiode is proposed. A p-InGaAs
photoabsorption layer is separated from a nondoped InGaAs/InAlAs superlattice avalanche …

We report the operation of a new long-wavelength (A.= 1.3, urn) superlattice avalanche
photodiode. The p+ in+ structure, grown by molecular beam epitaxy, consists of a 35 period …