Oxide semiconductors are ideal candidates for flexible and transparent electronics. Here, we
report complementary inverters based on p-type tin monoxide and n-type indium-gallium …

Oxide semiconductors are desirable for large-area and/or flexible electronics. Here, we
report highly optimized complementary inverters based on n-type indium–gallium–zinc …

Oxide semiconductors are regarded as promising materials for large-area and/or flexible
electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) …

Fully oxide thin-film transistor (TFT)-based complementary metal-oxide-semiconductor
(CMOS) ring oscillators are reported, for the first time, using large-area-compatible …

Oxide semiconductorsare highly attractive for the new-generation transparent/flexible
electronics. In this letter, logic gates (inverter, NAND, and transmission gates) and three …

Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics
because of their high electrical performance, low process temperature, high uniformity, and …

The present work investigated the electrical characteristics of Corbino structure p-type tin
monoxide (SnO) thin-film transistors (TFTs) and demonstrated a high-performance …

We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7 V⁠. Patterned …

Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based
complementary logic circuits that are based on two-dimensional (2D) planar structures …

In this letter, we report flexible fully oxide-based complementary metal-oxide-semiconductor
(CMOS) inverters and ring oscillators by the monolithic integration of flexible n-channel zinc …