Stepwise Ge vacancy manipulation enhances the thermoelectric performance of cubic GeSe
T Lyu, X Li, Q Yang, J Cheng, Y Zhang, C Zhang… - Chemical Engineering …, 2022 - Elsevier
In thermoelectrics, the native point defect enables the delicate balance between carrier
concentration and carrier mobility. The proper native point defect is prerequisite for the …
concentration and carrier mobility. The proper native point defect is prerequisite for the …
The role of cation vacancies in GeSe: stabilizing high‐symmetric phase structure and enhancing thermoelectric performance
B Duan, Y Zhang, Q Yang, Y Li, J Cheng… - Advanced Energy …, 2022 - Wiley Online Library
Enhancing crystal symmetry is perceived as the most efficacious strategy to improve the
thermoelectric performance of GeSe. Although multicomponent alloying is commonly …
thermoelectric performance of GeSe. Although multicomponent alloying is commonly …
Regulation of Ge vacancies through Sm doping resulting in superior thermoelectric performance in GeTe
T Zhang, S Deng, X Zhao, X Ruan, N Qi… - Journal of Materials …, 2022 - pubs.rsc.org
A high thermoelectric figure of merit ZT of 2.5 at 730 K is achieved in p-type Ge1− xSmxTe
through synergetic optimization of electrical and thermal transport properties. Sm doping …
through synergetic optimization of electrical and thermal transport properties. Sm doping …
High power factor and enhanced thermoelectric performance in Sc and Bi codoped GeTe: Insights into the hidden role of rhombohedral distortion degree
Modification of crystal symmetry induced by chemical doping or alloying is well known to
optimize the charge carrier transport properties in thermoelectric materials. Historically, the …
optimize the charge carrier transport properties in thermoelectric materials. Historically, the …
Tailoring band structure and Ge precipitates through Er and Sb/Bi co-doping to realize high thermoelectric performance in GeTe
The intrinsic carrier concentration in most thermoelectric materials deviates from the optimal
range. Doping is the most effective way to optimize the carrier concentration, yet the …
range. Doping is the most effective way to optimize the carrier concentration, yet the …
High performance GeTe thermoelectrics enabled by lattice strain construction
Numerous intrinsic Ge vacancies in thermoelectric GeTe not only lead to overhigh carrier
concentration but also seriously deteriorate carrier mobility, which shackles its …
concentration but also seriously deteriorate carrier mobility, which shackles its …
Band and vacancy engineering in SnTe to improve its thermoelectric performance
SnTe is a promising thermoelectric material with low cost and high stability. However, its
performance is limited by the large energy separation between the light hole L band and the …
performance is limited by the large energy separation between the light hole L band and the …
Intrinsic vacancy suppression and band convergence to enhance thermoelectric performance of (Ge, Bi, Sb) Te crystals
R Zhang, J Pei, Z Shan, W Zhou, Y Wu, Z Han… - Chemical Engineering …, 2022 - Elsevier
GeTe-based alloys have drawn increasing attention because of the excellent thermoelectric
(TE) performance and potential applications in mid-temperature range. Although reducing …
(TE) performance and potential applications in mid-temperature range. Although reducing …
Band engineering SnTe via trivalent substitutions for enhanced thermoelectric performance
SnTe is an attractive candidate for applications as a p-type thermoelectric semiconductor.
The pristine SnTe compound exhibits poor thermoelectric performance at high temperatures …
The pristine SnTe compound exhibits poor thermoelectric performance at high temperatures …
Realizing high thermoelectric performance in GeTe through optimizing Ge vacancies and manipulating Ge precipitates
Recent vast reinvestigations on GeTe, a promising thermoelectric material at medium
temperature, have triggered enormous enthusiasm in the thermoelectric community again …
temperature, have triggered enormous enthusiasm in the thermoelectric community again …