[HTML][HTML] Terrace morphology on fused silica surfaces by Ar+ ion bombardment with Mo co-deposition
D Chen, G Yang, J Li, D Hirsch, Y Liu, F Frost… - Applied Physics …, 2018 - pubs.aip.org
The morphology evolution of self-organized nanopatterns induced during Ar+ ion
bombardment (IB) with Mo co-deposition on fused silica (SiO 2) surfaces at different …
bombardment (IB) with Mo co-deposition on fused silica (SiO 2) surfaces at different …
Temporal evolution on SiO2 surface under low energy Ar+-ion bombardment: roles of sputtering, mass redistribution, and shadowing
Self-organized pattern evolution on SiO 2 surface under low energy Ar-ion irradiation has
been investigated extensively at varied ion energies, angles of ion incidence, and ion flux …
been investigated extensively at varied ion energies, angles of ion incidence, and ion flux …
Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition
Y Liu, D Hirsch, R Fechner, Y Hong, S Fu, F Frost… - Applied Physics A, 2018 - Springer
The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is
extended to a pre-rippled binary compound surface of fused silica (SiO 2). The dependence …
extended to a pre-rippled binary compound surface of fused silica (SiO 2). The dependence …
Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
In this study, we have investigated temporal evolution of silicon surface topography under
500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both …
500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both …
Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment
The formation of self-organized Si nanostructures induced by Mo seeding during normal
incidence Ar+ ion bombardment at room temperature is reported. Silicon surfaces without …
incidence Ar+ ion bombardment at room temperature is reported. Silicon surfaces without …
Role of initial surface roughness on ion induced surface morphology
P Karmakar, SA Mollick, D Ghose… - Applied Physics …, 2008 - pubs.aip.org
We report here the influence of initial surface roughness on the development of ion induced
Si surface morphology. Surfaces of different initial roughness have been generated …
Si surface morphology. Surfaces of different initial roughness have been generated …
Nanoscale periodic and faceted structures formation on Si (1 0 0) by oblique angle oxygen ion sputtering
P Karmakar, D Ghose - Nuclear Instruments and Methods in Physics …, 2005 - Elsevier
The dynamics of ripple topography on silicon surfaces generated by oxygen ion
bombardment with increasing fluences have been investigated by atomic force microscopy …
bombardment with increasing fluences have been investigated by atomic force microscopy …
The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition
H Hofsäss, K Zhang, A Pape, O Bobes, M Broetzmann - Applied Physics A, 2013 - Springer
We investigate the ripple pattern formation on Si surfaces at room temperature during
normal incidence ion beam erosion under simultaneous deposition of different metallic co …
normal incidence ion beam erosion under simultaneous deposition of different metallic co …
Surfactant-driven self-organized surface patterns by ion beam erosion
K Zhang, M Brötzmann, H Hofsäss - New Journal of Physics, 2011 - iopscience.iop.org
In this paper, we report on the self-organized pattern formation on Si surfaces driven by Fe
surfactant atoms. Si substrates were irradiated with 5 keV Xe ions at normal incidence and …
surfactant atoms. Si substrates were irradiated with 5 keV Xe ions at normal incidence and …
Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon
B Fares, B Gautier, N Baboux, G Prudon… - Applied surface …, 2004 - Elsevier
The oxygen ion-beam-induced surface roughening observed during SIMS depth profiling of
both Si (100) and 10° disoriented Si (100) surface without flooding has been studied by …
both Si (100) and 10° disoriented Si (100) surface without flooding has been studied by …