Low-cost, small-footprint, highly efficient, and mass-producible on-chip wavelength-division-
multiplexing (WDM) light sources are key components in future silicon electronic and …

Silicon based InAs quantum dot mode locked lasers (QD-MLLs) are promising to be
integrated with silicon photonic integrated circuits (PICs) for optical time division multiplexing …

We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum
dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated …

We investigate the dynamical response of a quantum dot photonic integrated circuit formed
with a combination of eleven passive and active gain cells operating when these cells are …

Wavelength tunable lasers are increasingly needed as key components for wavelength
resource management technologies in future dense wavelength division multiplexing …

We demonstrate, for the first time, a single section passively mode‐locked InAs/InGaAs
quantum dot laser directly grown on on‐axis (001) GaP/Si substrate. The laser has a …

Self-pulsation at 45 GHz repetition frequency has been demonstrated in 1.5 μm monolithic
single-section quantum dot Fabry-Perot semiconductor lasers without saturable absorber …

We report the first demonstration of direct modulation of InAs/GaAs quantum dot (QD) lasers
grown on on-axis (001) Si substrate. A low threading dislocation density GaAs buffer layer …

Electrically pumped lasers directly grown on silicon are key devices interfacing silicon
microelectronics and photonics. We report here, for the first time, to the best of our …

Recent results on GaAs-based high-speed mode-locked quantum-dot (QD) lasers and
optical amplifiers with an operation wavelength centered at 1290 nm are reviewed and their …