One-gate-wide CMOS inverter on laser-recrystallized polysilicon
JF Gibbons, KF Lee - IEEE Electron Device Letters, 1980 - ieeexplore.ieee.org
A CMOS inverter having a single gate for both n and p channel devices has been fabricated
using bulk silicon for the p channel device and a laser-recrystallized silicon film for the n …
using bulk silicon for the p channel device and a laser-recrystallized silicon film for the n …
Vertical single-gate CMOS inverters on laser-processed multilayer substrates
GT Goeloe, EW Maby, DJ Silversmith… - 1981 International …, 1981 - ieeexplore.ieee.org
Joint-gate, vertically stacked CMOS (JCMOS) inverters have been fabricated by a process
which utilizes a multilayer substrate consisting of an oxidized n-type silicon wafer upon …
which utilizes a multilayer substrate consisting of an oxidized n-type silicon wafer upon …
Multiple layers of CMOS integrated circuits using recrystallized silicon film
This letter presents a method to fabricate high performance three-dimensional (3-D)
integrated circuits based on the conventional CMOS SOI technology. The first layer of …
integrated circuits based on the conventional CMOS SOI technology. The first layer of …
Multilayer CMOS device fabricated on laser recrystallized silicon islands
S Akiyama, S Ogawa, M Yoneda… - 1983 International …, 1983 - ieeexplore.ieee.org
Multilayer CMOS devices were fabricated by a laser recrystallization technology. The single
crystalline silicon islands embedded in an insulator on the top of MOS IC were studied. To …
crystalline silicon islands embedded in an insulator on the top of MOS IC were studied. To …
A monolithic integrated circuit fabricated in laser-annealed polysilicon
TI Kamins, KF Lee, JF Gibbons… - IEEE Transactions on …, 1980 - ieeexplore.ieee.org
An integrated-circuit (IC) fabrication process has been used to construct small-geometry
MOS transistors and a ring oscillator with the active transistor channels in a thin layer of …
MOS transistors and a ring oscillator with the active transistor channels in a thin layer of …
Low-power and high-stability SRAM technology using a laser-recrystallized p-channel SOI MOSFET
Y Takao, H Shimada, N Suzuki… - IEEE transactions on …, 1992 - ieeexplore.ieee.org
Laser recrystallization of p-channel SOI MOSFETs on an undulated insulating layer is
demonstrated for SRAMs with low power and high stability. Self-aligned p-channel SOI …
demonstrated for SRAMs with low power and high stability. Self-aligned p-channel SOI …
Thin film MOSFET's fabricated in laser‐annealed polycrystalline silicon
KF Lee, JF Gibbons, KC Saraswat, TI Kamins - Applied Physics Letters, 1979 - pubs.aip.org
Both depletion‐and enhancement‐mode MOSFET's have been fabricated with the active
transistor channels in laser‐annealed polycrystalline‐silicon films. A dose of 3× 1012 …
transistor channels in laser‐annealed polycrystalline‐silicon films. A dose of 3× 1012 …
Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film
We report ap channel thin-film transistor (TFT) made of directly deposited microcrystalline
silicon (μc-Si). By integrating this p TFT with its n channel counterpart on a single μc-Si film …
silicon (μc-Si). By integrating this p TFT with its n channel counterpart on a single μc-Si film …
Fully isolated lateral bipolar—MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2
BY Tsaur, DJ Silversmith, JCC Fan… - IEEE electron device …, 1983 - ieeexplore.ieee.org
A four-terminal device that can be operated either as a lateral npn bipolar transistor or as a
conventional n-channel MOSFET has been fabricated in silicon-on-insulator films prepared …
conventional n-channel MOSFET has been fabricated in silicon-on-insulator films prepared …
A stacked CMOS technology on SOI substrate
S Zhang, R Han, X Lin, X Wu… - IEEE Electron Device …, 2004 - ieeexplore.ieee.org
A stacked CMOS technology fabricated on semiconductor-on-insulator (SOI) wafers with the
p-MOSFET on the SOI film and the n-MOSFET on the bulk substrate is demonstrated. The …
p-MOSFET on the SOI film and the n-MOSFET on the bulk substrate is demonstrated. The …