A fully integrated dual-mode highly linear 2.4 GHz CMOS power amplifier for 4G WiMax applications
In recent years, there has been tremendous interest in trying to implement the power
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …
A 2.4 GHz fully integrated linear CMOS power amplifier with discrete power control
A fully integrated 2.4 GHz CMOS power amplifier (PA) in a standard 0.18 mum CMOS
process is presented. Using a parallel-combining transformer (PCT) and gate bias …
process is presented. Using a parallel-combining transformer (PCT) and gate bias …
A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS
D Zhao, P Reynaert - IEEE Journal of Solid-State Circuits, 2013 - ieeexplore.ieee.org
A 60-GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology.
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
A low voltage fully-integrated 0.18 um CMOS power amplifier for 5GHz WLAN
W Zhang, ES Khoo, T Tear - … of the 28th European Solid-State …, 2002 - ieeexplore.ieee.org
This paper presents design and measurement results of power amplifier (PA) for wireless
local area network (WLAN) at 5 GHz using standard commercial CMOS 0.18 um process …
local area network (WLAN) at 5 GHz using standard commercial CMOS 0.18 um process …
A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS
This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-
generation (5G) mobile user equipment integrated phased array transceivers. The output …
generation (5G) mobile user equipment integrated phased array transceivers. The output …
A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS
Y Zhang, P Reynaert - 2017 IEEE Radio Frequency Integrated …, 2017 - ieeexplore.ieee.org
This paper presents a high-efficiency, linear power amplifier (PA) for 28GHz mobile
communications in 40nm CMOS technology. The design and layout are optimized for high …
communications in 40nm CMOS technology. The design and layout are optimized for high …
A 25–35 GHz neutralized continuous class-F CMOS power amplifier for 5G mobile communications achieving 26% modulation PAE at 1.5 Gb/s and 46.4% peak PAE
This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
A 14.8 dBm 20.3 dB power amplifier for D-band applications in 40 nm CMOS
D Simic, P Reynaert - 2018 IEEE Radio Frequency Integrated …, 2018 - ieeexplore.ieee.org
This paper presents a high output power, high gain, class-AB power amplifier (PA) in 40 nm
CMOS technology for D-band applications. Two-way transformer-based power-combining is …
CMOS technology for D-band applications. Two-way transformer-based power-combining is …
A fully integrated 24-dBm CMOS power amplifier for 802.11 a WLAN applications
YS Eo, KD Lee - IEEE Microwave and Wireless Components …, 2004 - ieeexplore.ieee.org
A fully integrated 24-dBm complementary metal oxide semiconductor (CMOS) power
amplifier (PA) for 5-GHz WLAN applications is implemented using 0.18-μm CMOS foundry …
amplifier (PA) for 5-GHz WLAN applications is implemented using 0.18-μm CMOS foundry …
A single-chip highly linear 2.4 GHz 30dBm power amplifier in 90nm CMOS
A single-chip highly linear 2.4GHz 30dBm power amplifier in 90nm CMOS Page 1 378 • 2009
IEEE International Solid-State Circuits Conference ISSCC 2009 / SESSION 22 / PA AND …
IEEE International Solid-State Circuits Conference ISSCC 2009 / SESSION 22 / PA AND …