Abstract The growth of AlGaAs-GaAs double-heterostructure lasers on Si substrates by
metalorganic chemical vapor diposition has been reported by several groups in the past few …

High‐power GaAs/AlGaAs double‐heterostructure lasers have been fabricated on Si
substrates using a single‐step metalorganic chemical vapor deposition process. An output …

High-performance room-temperature Ga_, Al, As-GaAs double-heterostructure injection
lasers have been grown by the use of metalorganic and hydride sources. This metalorganic …

AIGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates
using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown …

High quality double-heterostructure (DH) lasers having excellent device characteristics have
been grown by metalorganic chemical vapor deposition (MOCVD), as reported by a number …

Single-longitudinal-mode laser operation of GaAIAs-GaAs double heterostructures has been
obtained from a variety of structures including channeled-substrate planar structures, 1-4 …

The growth behavior of AlGaAs/GaAs/InGaAs structures on non-planar (100) GaAs
substrates has been studied. The structures were grown by atmospheric pressure …

The heterointerfaces of single quantum wells and the characteristics of single-quantum-well
lasers on Si substrates grown with Al/sub 0.5/Ga/sub 0.5/As-Al/sub 0.55/Ga/sub 0.45/P …

Room‐temperature operation of Ga (1− x) Al x As/Ga (1− y) Al y As double‐heterostructure
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …

High-quality GaAs layers with dislocation densities of less than 5× 10 6 cm-2 on Si
substrates have been obtained through a combination of thermal-cycle annealing and …