We discuss key issues related to quantum dot infrared photodetectors. These are the normal
incidence response, the dark current, and the responsivity and detectivity. It is argued that …

This paper discusses key issues related to the quantum dot infrared photodetector (QDIP).
These are the normal incidence response, the dark current, and the responsivity and …

In this contribution we present a normal-incidence quantum dot (QD) infrared detector
structure. It is based on intra-conduction band transitions between the p-states of the QD and …

Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

The authors report an enhancement in the photocurrent caused by normal incidence (⁠ s-
polarization) radiation in a quantum dot-in-a-well (DWELL) based infrared photodetector …

We present data and calculations and examine the factors that determine the detectivities in
self-assembled InAs and InGaAs based quantum dot infrared photodetectors (QDIPs). We …

We report on the analysis of thermally-limited operation of quantum-dot infrared
photodetectors (QDIPs). A device model is developed and used to calculate the QDIP …

A novel infrared photodetector—the quantum-dot infrared phototransistor—based on a
multiple quantum dot structure is considered theoretically. An analytical model of the device …

We report on our study of the effects of interdot coupling on the properties of quantum dot
infrared photodetectors. The main effect we address here is the splitting of the optical …

Publisher Summary This chapter discusses the basics of quantum dot infrared
photodetectors (QDIPs) to understand some of the important advantages of this technology …