47–77 GHz and 70–155 GHz LNAs in SiGe BiCMOS technologies
G Liu, H Schumacher - 2012 IEEE Bipolar/BiCMOS Circuits and …, 2012 - ieeexplore.ieee.org
This paper presents two broadband LNAs covering the frequency ranges from 47 to 77 GHz
and 73 to 140 GHz, with peak gain above 20 dB. A proposed T-type matching topology has …
and 73 to 140 GHz, with peak gain above 20 dB. A proposed T-type matching topology has …
Broadband millimeter-wave LNAs (47–77 GHz and 70–140 GHz) using a T-type matching topology
G Liu, H Schumacher - IEEE Journal of Solid-State Circuits, 2013 - ieeexplore.ieee.org
This paper presents the design and characterization of two broadband millimeter-wave
LNAs realized in 0.25-μm and 0.13-μm SiGe BiCMOS technologies. Both circuits adopt a T …
LNAs realized in 0.25-μm and 0.13-μm SiGe BiCMOS technologies. Both circuits adopt a T …
A W-band LNA in 0.18-μm SiGe BiCMOS
L Gilreath, V Jam, P Heydari - 2010 IEEE International …, 2010 - ieeexplore.ieee.org
This paper presents the design and implementation of a W-band LNA. Fabricated in a 0.18-
μm SiGe BiCMOS technology, the five-stage LNA achieves a peak power gain of 19 dB with …
μm SiGe BiCMOS technology, the five-stage LNA achieves a peak power gain of 19 dB with …
An inductor-based 52-GHz 0.18/spl mu/m SiGe HBT cascode LNA with 22 dB gain
M Gordon, SP Voinigescu - … of the 30th European Solid-State …, 2004 - ieeexplore.ieee.org
A 52-GHz two-stage cascode LNA implemented in a production 0.18/spl mu/m SiGe
BiCMOS process is presented. By using inductors rather than transmission lines for …
BiCMOS process is presented. By using inductors rather than transmission lines for …
A SiGe: C BiCMOS LNA for 60GHz band applications
A new differential LNA dedicated to 60 GHz band has been implemented in a 130 nm
BiCMOS technology intended for millimeter-waves (mm-Waves) applications. Focusing on …
BiCMOS technology intended for millimeter-waves (mm-Waves) applications. Focusing on …
60 GHz cascode LNA with interstage matching: performance comparison between 130nm BiCMOS and 65nm CMOS-SOI technologies
C Majek, RR Severino, T Taris, Y Deval… - … on Signals, Circuits …, 2009 - ieeexplore.ieee.org
This paper presents a comparative study between two mm-wave technologies from
STMicroelectronics: 130 nm BiCMOS and 65 nm CMOS-SOI, through the implementation of …
STMicroelectronics: 130 nm BiCMOS and 65 nm CMOS-SOI, through the implementation of …
A high gain, W-band SiGe LNA with sub-4.0 dB noise figure
This paper presents a W-band LNA implemented in a 90 nm SiGe BiCMOS technology. The
LNA achieves a maximum gain of 34 dB and a minimum NF of 3.5 dB at 80 GHz with greater …
LNA achieves a maximum gain of 34 dB and a minimum NF of 3.5 dB at 80 GHz with greater …
Design of 60-GHz LNA in 0.13-μm SiGe BiCMOS
L Xu, Z Wang, J Xia, Y Zhao - 2008 Global Symposium on …, 2008 - ieeexplore.ieee.org
This paper presents the design of the matching network of a 60-GHz high-gain LNA.
Through analyzing commonly used structure, a simplified input matching network was …
Through analyzing commonly used structure, a simplified input matching network was …
A wide-bandwidth W-band LNA in InP/Si BiCMOS technology
P Watson, A Mattamana, R Gilbert… - 2014 IEEE MTT-S …, 2014 - ieeexplore.ieee.org
This paper presents the development of high-gain, wide-bandwidth, W-band LNA integrated
circuits utilizing a novel 0.25 μm InP/Si BiCMOS process with Ft/Fmax of 330/270 GHz. A 4 …
circuits utilizing a novel 0.25 μm InP/Si BiCMOS process with Ft/Fmax of 330/270 GHz. A 4 …
A 2.5 GHz BiCMOS low noise and high-gain differential LNA for WLAN receiver
HB Zhang, H Wu, M Cai… - 2009 Asia Pacific …, 2009 - ieeexplore.ieee.org
A 2.5 GHz BiCMOS differential LNA for WLAN front-end receiver is presented. The LNA is
fabricated with a JAZZ 0.35¿ m 1P4M SiGe BiCMOS process. The LNA provides a 50¿ input …
fabricated with a JAZZ 0.35¿ m 1P4M SiGe BiCMOS process. The LNA provides a 50¿ input …