A combination of transmission electron microscopy and high‐resolution x‐ray diffraction
analyses has been used to determine the exact strain in each layer of InAsP/InP multiple …

Low-and room-temperature optical absorption spectra are presented for a series of In As x P
1− x/InP strainedlayer multiple quantum well structures (0.11<~ x<~ 0.35) grown by low …

We present results of the growth of InAs x P 1− x/InP strained heterostructures by low
pressure metalorganic vapor phase epitaxy. A large incorporation of arsenic into the InAsP …

InAsP/InP strained multiple quantum wells (MQWs) were grown on InP (111) B and (100)
substrates by gas-source molecular-beam epitaxy. Specular surfaces were obtained under …

ABSTRACT InAsxP, _. JInP strained-layer heterostructures with a wide range of composition
x were prepared using atmosphericpressure organometallic vapor phase epitaxy …

We report on the optical and structural properties of strained InAlAs/InAsxP1x
heterostructures grown by solid source molecular beam epitaxy. The incorporation of As4 …

Strained-layer heterostructures of InGaAsP/InP are of interest for a variety of optoelectronic
device applications. InGaAsP/InP quantum well structures may be engineered to emit light in …

High quality quantum well structures of InGaAsP (λ= 1.55 μm)/InP were grown by low‐
pressure organometallic vapor phase epitaxy on 0.2° and 2° misoriented (001) InP …

Strained-layer multiple quantum well (MQW) InAsP/InP optical modulators have been
fabricated from layers grown by metal-organic vapor phase epitaxy. The devices are a series …

Abstract InP and InAsP/InP heterostructures have been grown on InP (111) B substrates by
gas-source molecular beam epitaxy. Specular surface morphology was obtained under …