Graphene quality indicators obtained by Raman spectroscopy have been correlated to the
structural changes of the graphene/germanium interface as a function of in-vacuum thermal …

Breakthroughs in cutting‐edge research fields such as hetero‐integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …

Growth of high-quality graphene on germanium is to date only reported at growth
temperatures near the substrate melting point. Direct integration of graphene growth into …

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

Graphene was shown to reveal intriguing properties of its relativistic two-dimensional
electron gas; however, its implementation to microelectronic applications is missing to date …

By combining scanning probe microscopy with Raman and x-ray photoelectron
spectroscopies, we investigate the evolution of CVD-grown graphene/Ge (001) as a function …

Despite its extraordinary charge carrier mobility, the lack of an electronic bandgap in
graphene limits its utilization in electronic devices. To overcome this issue, researchers have …

X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Raman
spectroscopy and scanning tunnelling microscopy/spectroscopy (STM/STS) were used to …

Graphene grown directly on Ge via chemical vapor deposition (CVD) can passivate the
underlying Ge surface, preventing its oxidation in ambient air for at least months. However …

The physical and chemical state of the underlying germanium (Ge) substrate is crucial for
the CVD synthesis of high-quality graphene. Here, we investigate the main causes …