Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution
L Beji, L Sfaxi, B Ismail, S Zghal, F Hassen… - Microelectronics …, 2003 - Elsevier
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …
Morphology and optical properties of p-type porous GaAs (1 0 0) layers made by electrochemical etching
SB Khalifa, B Gruzza, C Robert-Goumet… - Journal of …, 2008 - Elsevier
Porous GaAs layers were formed by electrochemical etching of p-type GaAs (100)
substrates in HF solution. A surface characterization has been performed on p-type GaAs …
substrates in HF solution. A surface characterization has been performed on p-type GaAs …
Nanostructurale nature of the porous GaAs layer formed on p+-GaAs substrate by electrochemical anodization
A porous GaAs layer has been formed by electrochemical anodization in HF based solution
on extremely doped p-type GaAs substrate. Porous nature of the elaborated sample has …
on extremely doped p-type GaAs substrate. Porous nature of the elaborated sample has …
Novel optical and structural properties of porous GaAs formed by anodic etching of n+-GaAs in a HF:C2H5OH:HCl:H2O2:H2O electrolyte: effect of etching time
M Naddaf, M Saad - Journal of Materials Science: Materials in Electronics, 2013 - Springer
Porous GaAs layers have been formed by anodic etching of n+-type GaAs (10.0) substrates
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …
Visible photoluminescence in porous GaAs capped by GaAs
L Beji, L Sfaxi, B Ismail, A Missaoui, F Hassen… - Physica E: Low …, 2005 - Elsevier
A typical porous structure with pores diameters ranging from 10 to 50nm has been obtained
by electrochemical etching of (100) heavily doped p-type GaAs substrate in HF solution …
by electrochemical etching of (100) heavily doped p-type GaAs substrate in HF solution …
Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching
J Sabataityt, I Šimkien, RA Bendorius… - Materials Science and …, 2002 - Elsevier
Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM
and optical methods. The morphology, chemical composition and photoluminescence of …
and optical methods. The morphology, chemical composition and photoluminescence of …
Structural and luminescent characteristics of porous GaAs
A Lebib, EB Amara, L Beji - Journal of Luminescence, 2017 - Elsevier
In this paper, we present the results of structural and photoluminescence (PL) studies on
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …
Structural and optical properties of electrochemically etched p+-type GaAs surfaces: influence of HF presence in the etching electrolyte
M Naddaf - Journal of Materials Science: Materials in Electronics, 2017 - Springer
Porous GaAs layers have been prepared by electrochemical etching of p+-type GaAs (10 0)
surfaces in two different solutions; HCl: H 2 O 2: H 2 O (HF free electrolyte) and HCl: H 2 O 2 …
surfaces in two different solutions; HCl: H 2 O 2: H 2 O (HF free electrolyte) and HCl: H 2 O 2 …
[HTML][HTML] Chemical composition of nanoporous layer formed by electrochemical etching of p-Type GaAs
We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …
Investigation of the optical and electrical properties of p-type porous GaAs structure
H Saghrouni, A Missaoui, R Hannachi, L Beji - Superlattices and …, 2013 - Elsevier
Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …