Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy

WT Tsang - Journal of Applied Physics, 1980 - pubs.aip.org
Room‐temperature low‐current‐threshold broad‐area Fabry‐Perot Al x Ga1− x As/Al y
Ga1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam …
被引用次数：34 相关文章 所有 8 个版本

Very low current threshold GaAs‐AlxGa1− xAs double‐heterostructure lasers grown by molecular beam epitaxy

WT Tsang, FK Reinhart, JA Ditzenberger - Applied Physics Letters, 1980 - pubs.aip.org
GaAs-AI, Gal_ xAs (x= 0.3) double-heterostructure (DH) lasers having very low current
threshold densities have been prepared by molecular beam epitaxy (MBE). For DH lasers …
被引用次数：76 相关文章 所有 8 个版本

Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

RD Dupuis, PD Dapkus - Applied Physics Letters, 1978 - pubs.aip.org
Room‐temperature Ga (1− x) Al x As‐GaAs DH lasers with very low threshold current
densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices …
被引用次数：81 相关文章 所有 7 个版本

Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1− xAs double‐heterostructure lasers grown by molecular beam epitaxy

WT Tsang - Applied Physics Letters, 1979 - pubs.aip.org
GaAs-AlxGa1_xAs double-heterostructure (DH) lasers that have current-threshold densities
at least as low as similar-geometry DH lasers prepared by liquid-phase epitaxy have been …
被引用次数：125 相关文章 所有 7 个版本

A visible (AlGa) As heterostructure laser grown by molecular beam epitaxy

WT Tsang, JA Ditzenberger - Applied Physics Letters, 1981 - pubs.aip.org
Visible (AlGa) As double‐heterostructure lasers with a 200‐Å Al0. 17Ga0. 83As active layer
have been prepared by molecular beam epitaxy. The diodes lase at∼ 7520 Å and have an …
被引用次数：28 相关文章 所有 6 个版本

The effect of substrate temperature on the current threshold of GaAs‐AlxGa1− xAs double‐heterostructure lasers grown by molecular beam epitaxy

WT Tsang, FK Reinhart, JA Ditzenberger - Applied Physics Letters, 1980 - pubs.aip.org
The current threshold densities (Jth) of broad-area double-heterostructure (DH) lasers, the
photoluminescence (PL) intensities of the p-GaAs cap layers, P-Alx Gal _ x As (x-0.3) …
被引用次数：93 相关文章 所有 8 个版本

Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition

RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room‐temperature operation of Ga (1− x) Al x As/Ga (1− y) Al y As double‐heterostructure
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …
被引用次数：51 相关文章 所有 6 个版本

New current injection 1.5‐μm wavelength GaxAlyIn1−x−yAs/InP double‐heterostructure laser grown by molecular beam epitaxy

WT Tsang, NA Olsson - Applied Physics Letters, 1983 - pubs.aip.org
We have prepared and characterized for the first time a new current injection double‐
heterostructure (DH) laser with Ga x Al y In1− x− y As as the active layer and InP as the …
被引用次数：30 相关文章 所有 4 个版本

Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

AY Cho, RW Dixon, HC Casey Jr… - Applied Physics Letters, 1976 - pubs.aip.org
The continuous (cw) operation at temperatures as high as 100° C of stripe‐geometry GaAs‐
Al x Ga1− x As double‐heterostructure lasers fabricated by molecular‐beam epitaxial (MBE) …
被引用次数：110 相关文章 所有 8 个版本

Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy

WT Tsang - Applied physics letters, 1986 - pubs.aip.org
The first device performance of GaAs/Al x Ga1− x As double‐heterostructure lasers grown by
chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities …
被引用次数：42 相关文章 所有 9 个版本