This research seeks to develop a novel branch of materials systems called Distributed
Intelligent Materials Systems (DIMS) which incorporate actuation, sensing, electronics and …

The research outlined in this paper describes part of a larger effort to develop a novel
branch of next-generation materials systems called Distributed Intelligent Materials Systems …

The utilization of gallium nitride (GaN) in the area of microelectronics continues to increase
due to the advantages it offers over other semiconductors. This paper presents GaN as a …

Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …

A method for fabricating suspended gallium nitride (GaN) structures for
microelectromechanical systems (MEMS) without direct etching of GaN is demonstrated. The …

The fabrication of MEMS structures has generally depended on the ability to carry out highly
selective, deep lateral and vertical etching of the component materials. This is particularly …

This paper covers various sensors and microsystems based on gallium nitride (GaN) micro
mechanical (acoustic) resonators. III-nitrides have been a subject of extensive research for …

Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties
that are highly desirable for micro-electro-mechanical systems (MEMS), and more …

This thesis is focused on the development of micro-electromechanical systems (MEMS) in III-
V nitride semiconductors, with a primary emphasis on gallium-nitride (GaN). Though GaN …

The conditions encountered in aerospace, in automotive and many industrial applications
present a challenge for semiconductor based sensor technologies. High temperatures (> …