Abstract High quality InP and Ga 1-x In x As layers have been grown on InP substrates using
MOVPE growth at atmospheric pressure. Excellent material quality has been obtained using …

We have demonstrated the feasibility of growth of InP/InGaAs structures directly on GaAs
using atmospheric pressure metal organic vapour phase epitaxy. Growth conditions and the …

We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs.
InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI) …

The low pressure metalorganic chemical vapor deposition epitaxial growth and
characterization of InP, Ga 0.47 In 0.53 As and Ga x In 1-x As y P 1-y, lattice-matched to InP …

High‐quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on
silicon substrates by a low‐pressure metalorganic chemical vapor deposition growth …

In this letter we report on preliminary results of heteroepitaxial growth of Ga0. 51In0. 49P on
Si with a GaAs interlayer by low‐pressure organometallic chemical vapor deposition …

Suitable LPE growth conditions needed to obtain (111) A oriented high-quality InP/In 0.53
Ga 0.47 As/InP double heterostructures were determined. These conditions were found by …

Good quality InP was successfully grown on (100) GaAs 2° off normal toward [011]
substrates by introducing low‐temperature grown GaAs/InP double buffer layers. It was …

Heteroepitaxial growth of InP on GaAs by low‐pressure metalorganic chemical vapor
deposition is reported. Trimethylindium‐trimethylphosphine adduct was used as the indium …

Heteroepitaxial growth of InP on Si with an intermediate GaAs buffer layer by low‐pressure
organometallic vapor phase epitaxy is reported. Excellent crystallinity of InP epilayers with …