III-V compound semiconductors (SC) have played a crucial role in the development of
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …

Silicon-based microelectronics has steadily improved in various performance-to-cost
metrics. But after decades of processor scaling, fundamental limitations and considerable …

During the past decade, group III-Nitride wide bandgap semiconductors have become the
focus of extremely intensive reearch because of their exceptional physical properties and …

Tremendous progress has been made in the last few years in the growth, doping and
processing technologies of the wide bandgap semiconductors. As a result, this class of …

In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …

Abstract III–N–V semiconductors are promising materials for use in next-generation
multijunction solar cells because these materials can be lattice matched to substrates such …

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

Since the 1960s advances in electronic and optoelectronic device technologies have been
primarily orchestrated by III-V semiconductors, which have led to an age of consumer …

The world requires inexpensive, reliable, and sustainable energy sources. Solar
photovoltaic (PV) technology, which converts sunlight directly into electricity, is an …

This book contains full account of the advances made in the dilute nitrides, providing an
excellent starting point for workers entering the field. It gives the reader easier access and …