Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive
review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and …

The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its
related compounds, such as InGaAsP alloy, have been realized as very important materials …

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are
predominantly made using III–V semiconductor compounds such as GaAs, InP, GaN, and …

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are
predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and …

III-V compound semiconductors (SC) have played a crucial role in the development of
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …

The optoelectronic properties of short-period InAs/(GaIn) Sb superlattices (SLs) grown by
molecular beam epitaxy on GaSb substrates are discussed. We report on the optimization of …

Publisher Summary This chapter discusses that metallo-organic chemical vapor deposition
(MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of …

Low-bandgap, lattice-mismatched Ga x In 1− x As (GaInAs) grown using InAs y P 1− y
(InAsP) compositional-step grades on InP is a primary choice for lightabsorbing, active …

The III-V AlGaInAs quaternary is particularly well suited to conventional molecular beam
epitaxy, and many devices based on this material system have already proved of interest in …