Optoelectronic devices involving epitaxial layers grown by MOCVD within the GaInAsP and
GaInAlAs material systems lattice matched to InP are reviewed. Besides discrete long …

InGaAs is a variable band gap semiconductor with excellent transport and optical properties.
This makes it attractive for electronic and optoelectronic devices. One of the most important …

High-quality, thin-film, lattice-matched (LM) InAs y P 1− y/In x Ga 1− x As double
heterostructures (DHs) have been grown lattice mismatched on InP substrates using …

We have demonstrated for the first time a pseudo‐quaternary GaInAsP semiconductor
consisting of a graded gap Ga0. 47In0. 53As/InP superlattice. The average composition and …

We report the first Gao. 47 1110.53 As-fnP photodetectors fabricated on silicon substrates,
using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum …

Photodetectors (PDs) responding to the light in short wave infrared (SWIR) of 1-3 μm have
attracted much attention because of the unique spectral features in this band. For example …

We summarize our work on back-illuminated photodiodes based on the As-Ga-In-P III-V
semiconductor system which, with InP substrates, can provide photodetectors to cover the …

The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …

Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been
engineered to provide a favourable band structure for the suppression of non-radiative …

Because of its low bandgap, GaInAs lattice matched to InP is a promising material for
photodetection for wavelengths to approximately 1.6 μm. In this paper we will present data …