InPSb was grown by low pressure metal-organic vapour phase epitaxy (LP-MOVPE) on InAs
at temperatures between 520° C and 570° C. The samples were analysed by Raman and …

We report a GaNAsSb pin photodetector operating in the 1.55-μ m-wavelength region. The
device consists of two undoped 70-Å GaN 0.025 As 0.615 Sb 0.36 quantum wells …

Since the 1960s advances in electronic and optoelectronic device technologies have been
primarily orchestrated by III-V semiconductors, which have led to an age of consumer …

Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

In this work, we present the assembly of a γ-In2Se3/GaAs heterostructure-based
photodetector linear array composed of 1× 10 device units. The layered γ-In2Se3 films with …

The first heteroepitaxy is reported of Ga0. 47In0. 53As on InP by low-pressure metalorganic
chemical vapour deposition (mocvd). Triethylindium (tei) and triethylgallium (teg) were used …

Recent progress in research on InGaAlN and II–VI systems has been remarkable, and this
paper reviews the properties of these materials from the viewpoint of making reliable light …

Monolithically integrated optoelectronic circuits combine optical devices such as light
sources (injection lasers and light emitting diodes) and optical detectors with solid-state …

We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode,
emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a …

III–V semiconductor display diodes fall into three material categories: direct, indirect, and
diode-phosphor combinations. The light generation mechanisms are well understood in …