We describe investigations of the effects of inserting a thin, low‐doped layer into the emitter
of an InP/In0. 53Ga0. 47As heterojunction phototransistor (HPT). This high‐low emitter …

Ga N As Sb∕ Ga As quantum wells were grown by solid-source molecular-beam epitaxy
utilizing a radio-frequency nitrogen plasma source. The GaNAsSb layers, originally the …

We present a comprehensive theoretical and experimental analysis of 1.3-μm
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …

The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …

The performance of high-speed semiconductor devices—the genius driving digital
computers, advanced electronic systems for digital signal processing, telecommunication …

High‐quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on
silicon substrates by a low‐pressure metalorganic chemical vapor deposition growth …

We study the growth of InAs0. 91Sb0. 09 lattice matched on GaSb presenting a bandgap of
0.29 eV (4.2 μm) at 300 K. The layers are grown on (100) GaSb and GaAs substrates at …

Photodiodes with a cut-off wavelength extended in the infrared-region up to 2.4 μm have
been fabricated using a mismatched Ga 1-x In x As/InAs y P 1-y/InP double heterostructure …

Metamorphic heterostructures containing bulk InAs1ÀxSbx layers and AlInAsSb barriers
were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb …

GaInAs lattice matched to InP was grown by molecular‐beam epitaxy over a temperature
range of 100–450 C and characterized by x‐ray diffraction, resistivity, and secondary ion …