[PDF][PDF] InGaAs-AlAsSb quantum cascade structures emitting at 3.1 lm
Conclusions: We have demonstrated InP-based In0. 53Ga0. 47As-AlAs0. 56Sb0. 44
quantum cascade structures emitting at λ $3.1 μm close to the design wavelength up to 240 …
quantum cascade structures emitting at λ $3.1 μm close to the design wavelength up to 240 …
Ga1− xInxAs/InAsyP1− y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
MA di Forte-Poisson, C Brylinski, J Di Persio… - Journal of Crystal …, 1992 - Elsevier
Photodiodes with a cut-off wavelength extended in the infrared-region up to 2.4 μm have
been fabricated using a mismatched Ga 1-x In x As/InAs y P 1-y/InP double heterostructure …
been fabricated using a mismatched Ga 1-x In x As/InAs y P 1-y/InP double heterostructure …