The electro-optic applications of InP and GaInAsP are reviewed. For fiber optics
applications, diode lasers have been developed with low cw room-temperature threshold …

A wide bandwidth (8 GHz) and a high gain-bandwidth product (70 GHz) have been
achieved with InP/lnGaAsP/lnGaAs avalanche photodiodes (APD's) grown by chemical …

Avalanche photodiodes with fast response times and high quantum efficiencies in the 1. 0-1.
6-! lm wavelength region are expected to find wide use in low-loss wide-bandwidth optical …

High-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical
beam epitaxy are described. These APDs exhibit low dark current (less than 50 nA at 90% of …

A theoretical model for the frequency response of InP/InGaAs avalanche photodiodes
(APDs) is presented. Included in the analysis are resistive, capacitive, and inductive …

Extremely high avalanche gains, up to 2 X 10\accompanied by low leakage current and
moderate excess avalanche noise, have been observed in small areas of diffused pn …

InGaAs/InP heterostructure pin photodiodes and two types of InGaAs/InP avalanche
photodetectors have been fabricated from structures grown by atmospheric-pressure …

High‐performance avalanche photodiodes responding out to 1.25 μm have been fabricated
in inverted‐mesa n+‐InP/n‐GaInAsP/n‐InP/p+‐InP structures. Uniform avalanche gains of …

Measurements are reported of the electrical characteristics and temperature dependence of
threshold current of InGaAsP-InP dh lasers (?= 1.3? m). Analysis of the I dV/dI characteristics …

The successful fabrication and demonstration of an InP optoelectronic switch is reported.
The results obtained suggest that this device may be better suited for high‐speed analog …