T Shiota, T Tsuchiya - US Patent 7,514,349, 2009 - Google Patents
The present invention relates to semiconductor optical devices and a manufacturing method thereof, and more par ticularly to a technique which is effectively applicable to the structure …
K Naoya, H Yagi, T Kitamura - US Patent 9,229,293, 2016 - Google Patents
(57) ABSTRACT A method for manufacturing a semiconductor optical device includes the steps of growing a stacked layer including lower and upper core layers, a first upper region …
S Hirose, T Usuki - US Patent 7,679,076, 2010 - Google Patents
Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20; an n-type contact layer (or a doping layer) 21 formed on one …
T Yamamoto, A Miyake - US Patent 7,084,982, 2006 - Google Patents
An optical apparatus includes an optical device arranged on an optical path extending from a light source to a predeter mined position, an optical sensor, and a measuring device which …
T Simoyama - US Patent 10,580,923, 2020 - Google Patents
(57) ABSTRACT A disclosed optical semiconductor device includes a first semiconductor layer having a first refractive index and a first optical absorption coefficient; and a second …
K Ishi, T Fujii, H Okuma, A Hiramoto - US Patent 8,120,151, 2012 - Google Patents
METHOD FOR MANUFACTURING THE SAME US PATENT DOCUMENTS 7,419.312 B2* 9/2008 Nagasaka....................... 385, 92 (75) Inventors: Kazuhisa Ishi, Tokyo (JP): Takaaki …
K Kameyama, K Mita - US Patent App. 10/812,454, 2004 - Google Patents
US20040245530A1 - Optical semiconductor device and method of manufacturing same - Google Patents US20040245530A1 - Optical semiconductor device and method of …
H Taniguchi - US Patent 8,615,026, 2013 - Google Patents
(57) ABSTRACT A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semi conductor layer, forming a first dielectric film …
T Omi - US Patent 6,759,700, 2004 - Google Patents
(57) ABSTRACT A high-Sensitive optical Sensor is provided. In the optical sensor in which MOS transistors and a semiconductor light-receiving element are integrated, the light …