Provided are a semiconductor device and an optical sensor device, each having reduced
dark current, and detectivity extended toward longer wavelengths in the near-infrared …

The present invention relates to semiconductor optical devices and a manufacturing method
thereof, and more par ticularly to a technique which is effectively applicable to the structure …

(57) ABSTRACT A method for manufacturing a semiconductor optical device includes the
steps of growing a stacked layer including lower and upper core layers, a first upper region …

Provided is an optical semiconductor device, which includes a GaAs substrate (or a
semiconductor substrate) 20; an n-type contact layer (or a doping layer) 21 formed on one …

An optical apparatus includes an optical device arranged on an optical path extending from
a light source to a predeter mined position, an optical sensor, and a measuring device which …

(57) ABSTRACT A disclosed optical semiconductor device includes a first semiconductor
layer having a first refractive index and a first optical absorption coefficient; and a second …

METHOD FOR MANUFACTURING THE SAME US PATENT DOCUMENTS 7,419.312 B2*
9/2008 Nagasaka....................... 385, 92 (75) Inventors: Kazuhisa Ishi, Tokyo (JP): Takaaki …

US20040245530A1 - Optical semiconductor device and method of manufacturing same -
Google Patents US20040245530A1 - Optical semiconductor device and method of …

(57) ABSTRACT A method of manufacturing a semiconductor optical device including a
semiconductor layer includes: forming a semi conductor layer, forming a first dielectric film …

(57) ABSTRACT A high-Sensitive optical Sensor is provided. In the optical sensor in which
MOS transistors and a semiconductor light-receiving element are integrated, the light …