AlGaAs-GaAs lasers grown by metalorganic chemical vapor deposition—A review
RD Dupuis - Journal of Crystal Growth, 1981 - Elsevier
High quality double-heterostructure (DH) lasers having excellent device characteristics have
been grown by metalorganic chemical vapor deposition (MOCVD), as reported by a number …
been grown by metalorganic chemical vapor deposition (MOCVD), as reported by a number …
Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers
JJ Coleman, PD Dapkus - Applied Physics Letters, 1980 - pubs.aip.org
Single-longitudinal-mode laser operation of GaAIAs-GaAs double heterostructures has been
obtained from a variety of structures including channeled-substrate planar structures, 1-4 …
obtained from a variety of structures including channeled-substrate planar structures, 1-4 …
The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition
RD Dupuis, CJ Pinzone - Journal of Crystal Growth, 1988 - Elsevier
Abstract The growth of AlGaAs-GaAs double-heterostructure lasers on Si substrates by
metalorganic chemical vapor diposition has been reported by several groups in the past few …
metalorganic chemical vapor diposition has been reported by several groups in the past few …
Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
R Dupuis, PD Dapkus - IEEE Journal of Quantum Electronics, 1979 - ieeexplore.ieee.org
Recently Ga 1-x Al x As-GaAs double-heterostructure lasers having low threshold current
densities have been grown by metalorganic chemical vapor deposition. In addition to these …
densities have been grown by metalorganic chemical vapor deposition. In addition to these …
Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy
WT Tsang - Journal of Applied Physics, 1980 - pubs.aip.org
Room‐temperature low‐current‐threshold broad‐area Fabry‐Perot Al x Ga1− x As/Al y
Ga1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam …
Ga1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam …
MBE as a production technology for AlGaAs lasers
H Tanaka, M Mushiage - Journal of crystal growth, 1991 - Elsevier
We are the first to succeed in the mass production of AlGaAs visible-wavelength
semiconductor laser on a commercial basis using MBE. Single-transverse-mode self …
semiconductor laser on a commercial basis using MBE. Single-transverse-mode self …
Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1978 - pubs.aip.org
Room‐temperature Ga (1− x) Al x As‐GaAs DH lasers with very low threshold current
densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices …
densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices …
Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room‐temperature operation of Ga (1− x) Al x As/Ga (1− y) Al y As double‐heterostructure
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …
Room‐temperature operation of Ga (1− x) AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room-temperature pulsed laser operation of Ga (l_x) AlxAs/GaAs double-heterostructure
lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved …
lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved …
Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy
AY Cho, RW Dixon, HC Casey Jr… - Applied Physics Letters, 1976 - pubs.aip.org
The continuous (cw) operation at temperatures as high as 100° C of stripe‐geometry GaAs‐
Al x Ga1− x As double‐heterostructure lasers fabricated by molecular‐beam epitaxial (MBE) …
Al x Ga1− x As double‐heterostructure lasers fabricated by molecular‐beam epitaxial (MBE) …