Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼ 0.98 μm) grown by gas‐source molecular beam epitaxy

G Zhang, A Ovtchinnikov - Applied physics letters, 1993 - pubs.aip.org
We report on the first strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP separate‐
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …
被引用次数：61 相关文章 所有 7 个版本

Reliable operation of strain‐compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers

T Fukunaga, M Wada, T Hayakawa - Applied physics letters, 1996 - pubs.aip.org
We report the reliable operation of strain-compensated InGaAs/InGaAsP/GaAs 1.06 μm
separate confinement heterostructure single-quantum-well laser diodes with tensile-strained …
被引用次数：63 相关文章 所有 6 个版本

High‐power single‐mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

DJ Arent, L Brovelli, H Jäckel, E Marclay… - Applied physics …, 1990 - pubs.aip.org
Strained single quantum well InGaAsl AIGaAs graded-index separate confinement
heterostructure lasers have been grown by molecular beam epitaxy over nonplanar …
被引用次数：19 相关文章 所有 8 个版本

Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy

G Zhang, J Näppi, K Vänttinen, H Asonen… - Applied physics …, 1992 - pubs.aip.org
Strained‐layer InGaAs/GaAs/GaInP separate confinement heterostructure single‐quantum
well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold …
被引用次数：41 相关文章 所有 7 个版本

High-power 0.8 µm InGaAsP/InGaP/AlGaAs single quantum well lasers with tensile-strained InGaP barriers

T Fukunaga, M Wada, T Hayakawa - Japanese journal of applied …, 1999 - iopscience.iop.org
We report the high-power operation InGaAsP/InGaP/AlGaAs separate confinement
heterostructure single quantum well laser diodes of 0.8 µm wavelength with InGaAsP …
被引用次数：20 相关文章 所有 6 个版本
[PDF] psu.edu

Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

SD Offsey, WJ Schaff, LF Lester… - IEEE journal of …, 1991 - ieeexplore.ieee.org
A study of strained InGaAs quantum wells grown on GaAs by molecular beam epitaxy was
performed in order to optimize the growth conditions for strained-layer single-and multiple …
被引用次数：57 相关文章 所有 8 个版本

Low-lattice-strain long-wavelength GaAsSb/GaInAs type-II quantum wells grown on GaAs substrates

M Kudo, K Ouchi, J Kasai… - Japanese journal of …, 2002 - iopscience.iop.org
To reduce the lattice strain of 1.3 µm-range quantum well lasers on GaAs substrates,
symmetric and type-II coupled double quantum wells with a GaAs/GaInAs/GaAsSb/GaInAs …
被引用次数：18 相关文章 所有 7 个版本

Strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas‐source molecular beam epitaxy

G Zhang - Applied physics letters, 1993 - pubs.aip.org
We demonstrate the first strained‐layer InGaAs/GaInAsP/GaInP separated confinement
heterostructure multiple quantum well lasers which emit at a wavelength of 0.98 μm. These …
被引用次数：19 相关文章 所有 7 个版本

Effects of rapid thermal annealing on lasing properties of InGaAs/GaAs/GaInP quantum well lasers

G Zhang, J Näppi, A Ovtchinnikov, H Asonen… - Journal of applied …, 1992 - pubs.aip.org
Thermal processing of strained-layer InGaAs/GaAs/GaInP separated conlinement
heterostructure single quantum well lasers, grown by gas-source molecular beam epitaxy, is …
被引用次数：33 相关文章 所有 6 个版本

Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

D Feketa, KT Chan, JM Ballantyne… - Applied physics …, 1986 - pubs.aip.org
A graded-index separate-confinement strained-layer quantum wen laser with
pseudomorphic Gao 63 Ino. 37 As quantum well was grown by metalorganic chemical vapor …
被引用次数：134 相关文章 所有 8 个版本