Avalanche photodiodes with fast response times and high quantum efficiencies in the 1. 0-1.
6-! lm wavelength region are expected to find wide use in low-loss wide-bandwidth optical …

High‐performance avalanche photodiodes responding out to 1.25 μm have been fabricated
in inverted‐mesa n+‐InP/n‐GaInAsP/n‐InP/p+‐InP structures. Uniform avalanche gains of …

Heterojunction lno. 53 Gao. 47 As/lnP avalanche photodiodes have recently been observed
to have a response to long-wavelength optical pulses which contains both fast and slow …

A wide bandwidth (8 GHz) and a high gain-bandwidth product (70 GHz) have been
achieved with InP/lnGaAsP/lnGaAs avalanche photodiodes (APD's) grown by chemical …

Recently, sensitive II\J53 Gao. 47 As/InP heterostructure avalanche photodiodes 1.2 were
fabricated for use in longwavelength (A= 1.0-1.6, urn) lightwave communications systems …

High-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical
beam epitaxy are described. These APDs exhibit low dark current (less than 50 nA at 90% of …

Vapour-grown 1.3 ?m InGaAsP/InP avalanche photodiodes × Close The Infona portal uses
cookies, ie strings of text saved by a browser on the user's device. The portal can access …

We have fabricated high quantum efficiency, high‐gain (≊ 5500) avalanche photodiodes
with long‐wavelength sensitivity up to λ= 1.7 μm. The primary dark current density at …

High performance inverted-mesa GaInAsP/InP avalanche photodiodes responding out to
1.25 μm have been fabricated. Uniform avalanche gains M, of 700 dark-current densities of …

An InP-based avalanche photodiode with a cutoff wavelength of 2.4 µm is reported. Type-II
GaInAs-GaAsSb quantum wells lattice-matched to InP were used in the absorption region of …