Simultaneously broadband and back-off efficient mm-wave PAs: A multi-port network synthesis approach

CR Chappidi, X Wu, K Sengupta - IEEE Journal of Solid-State …, 2018 - ieeexplore.ieee.org
Spectrally efficient operation with high power and high efficiency at deep backoff will be
critical for the next generation of millimeter-wave (mm-wave) transmitters for 5G and beyond …

A digital mm-wave PA architecture with simultaneous frequency and back-off reconfigurability

CR Chappidi, X Wu, K Sengupta - 2017 IEEE Radio Frequency …, 2017 - ieeexplore.ieee.org
Spectrally-efficient operation with high power and high efficiency at deep back-off will be
critical for the next-generation mm-Wave transmitters for 5G and beyond. In addition, as …

Frequency reconfigurable mm-wave power amplifier with active impedance synthesis in an asymmetrical non-isolated combiner: Analysis and design

CR Chappidi, K Sengupta - IEEE Journal of Solid-State Circuits, 2017 - ieeexplore.ieee.org
A frequency reconfigurable millimeter-wave (mm-wave) power amplifier (PA), which can be
programmed to operate efficiently for a wide swathe of the spectrum, approaching an …

A fully integrated 22.6 dBm mm-Wave PA in 40nm CMOS

F Shirinfar, M Nariman, T Sowlati… - 2013 IEEE Radio …, 2013 - ieeexplore.ieee.org
A fully integrated 60GHz CMOS PA with a PSAT of 22.6 dBm is presented. To our
knowledge, this is the highest reported PSAT at mm-waves in standard CMOS. To achieve a …

A 40–67 GHz Power Amplifier With 13 dBm and 16% PAE in 28 nm CMOS LP

M Bassi, J Zhao, A Bevilacqua… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Pushed by the availability of large fractional bandwidths, many well-established applications
are focusing mm-wave spectrum for product deployment. Generation of broadband power at …

A 23.2 dBm at 210GHz to 21.0 dBm at 235GHz 16-way PA-cell combined InP HBT SSPA MMIC

Z Griffith, M Urteaga, P Rowell… - 2014 IEEE Compound …, 2014 - ieeexplore.ieee.org
A 3-stage, 16-way PA-cell combined InP HBT solidstate power amplifier MMIC is presented
demonstrating 23.2 dBm (208.7 mW) Pout at 210GHz to 21.0 dBm (126.0 mW) at 235GHz for …

Multi-port active load pulling for mm-wave 5G power amplifiers: Bandwidth, back-off efficiency, and VSWR tolerance

CR Chappidi, T Sharma… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The opening of spectral bands in the millimeter-wave (mm-Wave) spectrum from 26 GHz
and extending up to the E-band poses new challenges to the power amplifier (PA) design for …

High-power high-efficiency class-E-like stacked mmWave PAs in SOI and bulk CMOS: Theory and implementation

A Chakrabarti, H Krishnaswamy - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
<? Pub Dtl=""?> Series stacking of multiple devices is a promising technique that can help
overcome some of the fundamental limitations of CMOS technology in order to improve the …

A continuous-mode harmonically tuned 19-to-29.5 GHz ultra-linear PA supporting 18Gb/s at 18.4% modulation PAE and 43.5% peak PAE

TW Li, MY Huang, H Wang - 2018 IEEE International Solid …, 2018 - ieeexplore.ieee.org
The 5 th generation (5G) mm-wave systems are expected to support wideband spectrum-
efficient modulations (eg, 64-QAM or 256-QAM) to achieve Gb/s-link-throughput revolution …

Millimeter-wave power amplifier integrated circuits for high dynamic range signals

H Wang, PM Asbeck, C Fager - IEEE Journal of Microwaves, 2021 - ieeexplore.ieee.org
The next-generation 5G and beyond-5G wireless systems have stimulated a substantial
growth in research, development, and deployment of mm-Wave electronic systems and …